Schottky diode using charge balance structure
First Claim
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1. A Schottky diode comprising:
- a metal layer and a semiconductor region forming a Schottky barrier therebetween;
a plurality of charge control electrodes formed in the semiconductor region beneath the Schottky barrier so as to influence an electric field in the semiconductor region to improve a breakdown voltage of the Schottky diode, wherein at least two of the plurality of charge control electrodes are electrically decoupled from one another so as to be biased differently from one another; and
a dielectric material insulating each of the plurality of charge control electrodes from one another and from the semiconductor region.
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Abstract
In accordance with an embodiment of the invention, a Schottky diode includes a metal layer in contact with a semiconductor region to form a Schottky barrier therebetween. A first trench extends in the semiconductor region. The first trench includes at least one electrode or diode therein.
257 Citations
30 Claims
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1. A Schottky diode comprising:
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a metal layer and a semiconductor region forming a Schottky barrier therebetween; a plurality of charge control electrodes formed in the semiconductor region beneath the Schottky barrier so as to influence an electric field in the semiconductor region to improve a breakdown voltage of the Schottky diode, wherein at least two of the plurality of charge control electrodes are electrically decoupled from one another so as to be biased differently from one another; and a dielectric material insulating each of the plurality of charge control electrodes from one another and from the semiconductor region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A Schottky diode comprising:
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a metal layer and a semiconductor region forming a Schottky barrier therebetween; and a first trench extending in the semiconductor region, the first trench having at least one diode therein, wherein no current flows through the first trench when the Schottky diode is biased in an on state. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A Schottky diode comprising:
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a metal layer; a semiconductor region in contact with the metal layer to form a Schottky barrier junction therebetween; a plurality of laterally spaced trenches each extending through at least a portion of the semiconductor region; and a plurality of diodes in each of the plurality of trenches, the plurality of diodes in each trench being insulated from the semiconductor region along the trench sidewalls, wherein no current flows through the first trench when the Schottky diode is biased in an on state. - View Dependent Claims (27, 28, 29, 30)
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Specification