Structure of image sensor module and a method for manufacturing of wafer level package

• US 7,061,106 B2
• Filed: 04/28/2004
• Issued: 06/13/2006
• Est. Priority Date: 04/28/2004
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Advanced Chip Engineering Technology Inc.
• Inventors: Yang, Wen-Kun, Yang, Wen-Pin
• Primary Examiner(s): Smith, Bradley K.
• Assistant Examiner(s): Menz, Douglas M.
• Application Number:
  US10/833,345
• Publication Number:
  US 20050242408A1
• Time in Patent Office: 776 Days
• Field of Search: 257/723, 257/678, 257/749, 257/680, 257/428
• US Class Current: 257/723
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/12105 Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
• CPC Class Codes: H01L 2224/20 Structure, shape, material or disposition of high density interconnect preforms
• CPC Class Codes: H01L 2224/211 Disposition
• CPC Class Codes: H01L 2224/24137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 2224/83874 Ultraviolet [UV] curing
• CPC Class Codes: H01L 2224/92244 the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14625 Optical elements or arrangements associated with the device
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements
• CPC Class Codes: H01L 27/14687 : Wafer level processing
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 31/0203 : Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H01L 31/02325 : the optical elements not being integrated nor being directly associated with the device
• CPC Class Codes: H05K 1/189 : characterised by the use of a flexible or folded printed circuit H05K3/326 takes precedence

Abstract

The present invention discloses an image sensor module and forming method of wafer level package. The image sensor module comprises an isolating base, a wafer level package, a lens holder, and a F.P.C.. The wafer level package having a plurality of image sensor dies and a plurality of solder balls is attached to the isolating base. A plurality of lens are placed in the lens holder, and the lens holder is located on the image sensor dies. The lens holder is placed in the F.P.C., and the F.P.C. has a plurality of solder joints coupled to the solder balls for conveniently transmitting signal of the image sensor dies. Moreover, the image sensor dies may be packaged with passive components or other dies with a side by side structure or a stacking structure.

Claims

1. A image sensor module, comprising:

an isolating base;

an image sensor die having a plurality of solder balls, attached to said isolating base;

a protection film formed on said image sensor die;

a lens holder having a plurality of lens, located on said image sensor die; and

a F.P.C. having a plurality of conductive solder joints coupled to said solder balls for conveniently transmitting signal of said image sensor die, wherein said lens holder is placed in said F.P.C..

2. The module in claim 1, wherein said protection film is SiO₂ or Al₂O₃ formed by spin coating.

3. The module in claim 1, wherein said image sensor module comprises a second die packaged with said image sensor die with a side by side structure or a stacking structure.

4. The module in claim 3, wherein said second die is selected from DSP die, acctive die, passive die, supprot die, CPU die or processor die.

5. The module in claim 1, wherein material of said isolating base is glass, silicon, ceramic or quartz crystal.

6. The module in claim 3, further comprising;

a first dielectric layer formed on said isolating base and filled in a space except said image sensor die and said second die on said isolating base;

a second dielectric layer formed on said second die;

a contact conductive layer formed on a first metal pad of said image sensor die and a second metal pad of said second die to cover said first metal pad and second metal pad, said contact conductive layer electrically coupling to said first metal pad and second metal pad, respectively;

an isolation layer formed on said contact conductive layer, and said isolation layer having openings on said contact conductive layer; and

solder balls welded on said openings and electrically coupling with said contact conductive layer, respectively.

7. The module in claim 1, wherein said image sensor die is CMOS image sensor die.

8. The module in claim 1, further comprising a filtering film formed on said protection film.

9. The module in claim 6, wherein material of said first dielectric layer is silicon rubber.

10. The module in claim 6, wherein material of said second dielectric layer is epoxy, SINR(Siloxane polymer)or BCB.

11. The module in claim 8, wherein said filtering film ia an IR filtering layer.

12. The module in claim 6, wherein material of said contact conductive layer is selected from Ni, Cu, Au and the combination thereof.

13. The module in claim 6, wherein material of said isolation layer is selected from epoxy, resin, Silicon Rubber and the combination thereof.

14. The module in claim 3, further comprising;

a first dielectric layer formed on said isolating base and filled in a space except said second die on said isolating base;

a first contact conductive layer formed on a first metal pad of said second die to entirely cover said first metal pad, said first contact conductive layer electrically coupling to said first metal pad;

an image sensor die stacking and attaching to said second die;

a second dielectric layer formed on said first dielectric layer and filled in a space except said image sensor die, said second dielectric layer having via hole formed on said first contact conductive layer;

a third dielectric layer formed on said image sensor die;

a second contact conductive layer formed on a second metal pad of said image sensor die and filled in said via hole to cover said second metal pad, said second contact conductive layer electrically coupling to said second metal pad and said first contact conductive layer;

an isolation layer formed on said second contact conductive layer, and said isolation layer having openings on said second contact conductive layer; and

solder balls welded on said openings and electrically coupling with said second contact conductive layer, respectively.

15. The module in claim 14, wherein material of said first dielectric layer is silicon rubber.

16. The module in claim 14, wherein material of said second dielectric layer is polyimide (PI), BT SINR, or epoxy.

17. The module in claim 14, wherein material of said second dielectric layer is polyimide (PI), BT or SINR(Siloxane polymer).

18. The module in claim 14, wherein material of said first and second contact conductive layer is selected from Ni, Cu, Au and the combination thereof.

19. The module in claim 14, wherein material of said isolation layer is selected from epoxy, resin and the combination thereof.