Method and apparatus switching a semiconductor switch with a multi-state drive circuit

• US 7,061,301 B2
• Filed: 12/19/2003
• Issued: 06/13/2006
• Est. Priority Date: 12/19/2003
• Status: Active Grant

• Current Assignee: Power Integrations Incorporated
• Original Assignee: Power Integrations Incorporated
• Inventors: Pham, Giao Minh
• Primary Examiner(s): Ton, My-Trang Nu
• Application Number:
  US10/742,545
• Publication Number:
  US 20050134358A1
• Time in Patent Office: 907 Days
• Field of Search: 327/108, 327/112, 327/379, 327/381, 327/389, 327/391, 327/427, 327434-437, 327/440, 326 82- 87
• US Class Current: 327/427
• CPC Class Codes: H03K 17/04206 in field-effect transistor switches
• CPC Class Codes: H03K 17/164 using parallel switching arrangements
• CPC Class Codes: H03K 17/167 using parallel switching arrangements

Abstract

A method and an apparatus for implementing a semiconductor switch multi-stage drive circuit. The disclosed method and an apparatus reduce losses in a semiconductor switch when it is turned from an off state to an on state or from an on state to an off state. The reduction in losses is achieved without influencing the dv/dt across the semiconductor switch during a first time period while the semiconductor switch is switching. This reduction in losses is therefore achieved with very little increase in the noise generated due to rapid dv/dt during the first time period when the semiconductor switch is switching. The configuration of the circuitry to achieve this reduction in switching losses is such that benefits are less sensitive to manufacturing tolerances and temperature effects than alternative semiconductor switch drive schemes to achieve similar results.

Claims

1. A circuit comprising:

a semiconductor switch adapted to switch between first and second states, wherein the first state is one of an off state or an on state, wherein the second state is an other one of the off state or the on state;

a plurality of drive circuits coupled to the semiconductor switch, the plurality of drive circuits having a drive circuit impedance and coupled to provide a plurality of drive signals to switch the semiconductor switch from the first state to the second state; and

a selector circuit coupled to the semiconductor switch through a connection to sense the semiconductor switch, the selector circuit further coupled to each of the plurality of drive circuits to select in response to the sensing of the semiconductor switch through the connection the drive circuits that provide the plurality of drive signals to the semiconductor switch to reduce the drive circuit impedance as the semiconductor switch switches from the first state to the second state.

2. The circuit of claim 1 wherein the plurality of drive circuits comprise a first drive circuit and a second drive circuit, wherein the first drive circuit provides a first drive signal for a first time period and the second drive circuit provides a second drive signal for a second time period while the semiconductor switch switches from the first state to the second state.

3. The circuit of claim 2 wherein the first drive circuit provides the first drive signal during both the first and second time periods.

4. The circuit of claim 2 wherein the semiconductor switch includes a drive terminal and a reference voltage terminal, wherein the first and second drive signals are coupled to the drive terminal of the semiconductor switch.

5. The circuit of claim 4 wherein the second time period starts when the voltage between the drive terminal and reference voltage terminal reaches a first voltage threshold value.

6. The circuit of claim 2 wherein the connection comprises a current sensor coupled to the semiconductor switch and the selector circuit.

7. The circuit of claim 6 wherein the second time period starts when a current through the semiconductor switch is sensed to cross a current threshold value.

8. The circuit of claim 2 wherein the second time period starts when a voltage across the semiconductor switch crosses a second voltage threshold value as the semiconductor switch switches from the first state to the second state.

9. The circuit of claim 2 wherein the second time period starts when a change in voltage across the semiconductor switch over a time period (dv/dt) occurs as the semiconductor switch switches from the first state to the second state.

10. The circuit of claim 2 wherein the first time period is a fixed time period.

11. The circuit of claim 1 wherein the semiconductor switch comprises a metal oxide field effect transistor (MOSFET).

12. A method, comprising:

selectively driving a semiconductor switch with a first drive signal from a drive circuit to switch from a first state to a second state, wherein the first state comprises one of an off state or an on state, wherein the second state comprises an other one of the off state or the on state;

sensing the semiconductor switch through a connection; and

selectively driving the semiconductor switch with a second drive signal from the drive circuit in response to the sensing of the semiconductor switch through the connection to switch the semiconductor switch from the first state to the second state to reduce a drive circuit impedance after the semiconductor switch has already begun to switch from the first state to the second state.

13. The method of claim 12 wherein selectively driving the semiconductor switch with the first drive signal comprises selectively driving the semiconductor switch with the first drive signal for a first time period, wherein selectively driving the semiconductor switch with the second drive signal comprises selectively driving the semiconductor switch with the second drive signal for a second time period.

14. The method of claim 13 wherein selectively driving the semiconductor switch with the first drive signal comprises driving the semiconductor switch during both the first and second time periods.

15. The method of claim 13 wherein the sensing of the semiconductor switch through the connection further comprises sensing a voltage at a drive terminal of the semiconductor switch.

16. The method of claim 15 further comprising starting the second time period when the voltage at the driver terminal reaches a first voltage threshold value.

17. The method of claim 13 wherein the sensing of the semiconductor switch through the connection further comprises sensing a voltage drop across the semiconductor switch.

18. The method of claim 17 further comprising starting the second time period when the voltage drop across the semiconductor switch falls below a second voltage threshold value.

19. The method of claim 17 further comprising starting the second time period when a change in the voltage drop across the semiconductor switch over a time period (dv/dt) occurs.

20. The method of claim 12 wherein the first time period is a fixed time period.