Exposure apparatus including micro mirror array and exposure method using the same

• US 7,061,582 B2
• Filed: 06/13/2003
• Issued: 06/13/2006
• Est. Priority Date: 09/19/2002
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Yong Hoon, Zinn, Shun Yong, Yang, Seung Hune
• Primary Examiner(s): Kim, Peter B.
• Application Number:
  US10/460,227
• Publication Number:
  US 20040057034A1
• Time in Patent Office: 1,096 Days
• Field of Search: 355/67, 355/53, 355/52, 355/55, 355/77, 348/743, 349/4, 349/77, 347/239, 250/492.1, 250/492.2
• US Class Current: 355/67
• CPC Class Codes: G03B 27/54 Lamp housings; Illuminating means
• CPC Class Codes: G03F 7/70116 Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets

Abstract

An exposure method and apparatus for use in exposing a photoresist on a semiconductor wafer do not employ an aperture for shaping the exposure light. The exposure apparatus includes a light source unit, a reflecting mirror unit having a micro mirror array (MMA) and a control unit that controls the MMA, and a pattern transfer unit that transfers the pattern of a photomask onto the photoresist. The angles of inclination of the respective mirrors of the MMA are adjusted to reflect incident light in a manner that shapes the incident light. Accordingly, it is possible to form a pattern having the highest degree of resolution and optimum depth of focus (DOF) in the shortest amount of processing time.

Claims

1. An exposure apparatus for use in the manufacturing of semiconductor devices, the exposure apparatus comprising:

a light source that emits light which propagates along an optical axis of the apparatus;

a pattern transfer unit including a photomask that bears a pattern to be transcribed, said mask being situated along said optical axis; and

a reflecting mirror unit disposed along said optical axis between said light source and said pattern transfer unit, said reflecting mirror unit including a micro mirror array (MMA) comprising a plurality of micro mirrors positioned in the apparatus so as to reflect light emitted by said light source to said pattern transfer unit;

wherein the reflecting mirror unit directs the light emitted by the light source onto the photomask at oblique angles relative to a plane of the photomask to prevent 0^th order incident light from reaching the photomask.

2. The exposure apparatus of claim 1, wherein said mirrors are supported in said reflecting mirror unit such that relative inclinations thereof can be individually adjusted, and the reflecting mirror unit further comprises driving units disposed on back surfaces of the mirrors, respectively, and operative to adjust the inclination of said mirrors.

3. The exposure apparatus of claim 2, wherein the reflecting mirror unit comprises a control unit operatively connected to said driving units so as to control the operations of the driving units.

4. The exposure apparatus of claim 3, wherein the control unit comprises:

an input section by which information regarding the pattern of the photomask can be input;

a processor operatively connected to said input section and configured to determine angles of inclination for the respective mirrors of the MMA based on the information input via said input unit; and

a controller operatively connected to said processor and to said driving units so as to control the operations of the driving units based on determinations made by said processor.

5. The exposure apparatus of claim 1, wherein said pattern transfer unit comprises a condensing lens and a projecting lens disposed on opposite sides of said photomask with respect to said optical axis of the apparatus.

6. A method of exposing a photoresist, the method comprising:

generating exposure light;

providing a photomask having a pattern that is to be transferred to the photoresist; and

reflecting the exposure light along an optical axis through the photomask and towards the photoresist with an array of micro mirrors disposed side-by-side;

wherein the array of micro mirrors directs the exposure light onto the photomask at oblique angles relative to a plane of the photomask to prevent 0^th order incident light from reaching the photomask.

7. The method of claim 6, wherein said reflecting comprises establishing the inclinations of said micro mirrors individually, relative to said optical axis, on the basis of information regarding the pattern of the photomask.

8. The method of claim 7, wherein said reflecting comprises adjusting the inclinations of said micro mirrors individually on the basis of said information.

9. The method of claim 7, wherein said reflecting comprises directing rays of the exposure light onto the photomask at oblique angles relative to the plane of the photomask.

10. A method of exposing a photoresist, the exposure method comprising:

providing a photomask having a pattern to be transferred to the photoresist;

quantifying information regarding the pattern to be transferred to the photoresist;

generating exposure light;

determining, from the information regarding the pattern of the photomask, a form for the shape of the exposure light to be directed through the photomask and onto the photoresist; and

reflecting rays of the exposure light, along an optical axis through the photomask, with an array of micro mirrors disposed side-by-side and oriented to shape the exposure light into said form;

wherein the array of micro mirrors directs the exposure light onto the photomask at oblique angles relative to a plane of the photomask to prevent 0^th order incident light from reaching the photomask.

11. The method of claim 10, wherein said reflecting comprises adjusting relative inclinations of said micro mirrors individually, relative to said optical axis.

12. The method of claim 11, wherein said reflecting comprises directing rays of the exposure light onto the photomask at oblique angles relative to the plane of the photomask.