Dynamic mask for producing uniform or graded-thickness thin films

• US 7,062,348 B1
• Filed: 07/13/2000
• Issued: 06/13/2006
• Est. Priority Date: 07/13/2000
• Status: Active Grant

• Current Assignee: EUV Limited Liability Corporation
• Original Assignee: The Extreme Ultaviolet Lithography LLC
• Inventors: Folta, James A.
• Primary Examiner(s): Picard, Leo
• Assistant Examiner(s): Garland, Steven R.
• Application Number:
  US09/615,281
• Time in Patent Office: 2,161 Days
• Field of Search: 700/118, 700/119, 700/121, 427/163.2, 427/128, 427/255.5, 427/248.1, 427/255.7, 427/282, 427/526, 204/192.11, 204/192.12, 204/298.11, 204/298.04, 204/298.23, 118/690, 118/715, 118/720, 118/723, 118/301, 118/504, 359/885
• US Class Current: 700/118
• CPC Class Codes: C23C 14/044 using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient

Abstract

A method for producing single layer or multilayer films with high thickness uniformity or thickness gradients. The method utilizes a moving mask which blocks some of the flux from a sputter target or evaporation source before it deposits on a substrate. The velocity and position of the mask is computer controlled to precisely tailor the film thickness distribution. The method is applicable to any type of vapor deposition system, but is particularly useful for ion beam sputter deposition and evaporation deposition; and enables a high degree of uniformity for ion beam deposition, even for near-normal incidence of deposition species, which may be critical for producing low-defect multilayer coatings, such as required for masks for extreme ultraviolet lithography (EUVL). The mask can have a variety of shapes, from a simple solid paddle shape to a larger mask with a shaped hole through which the flux passes. The motion of the mask can be linear or rotational, and the mask can be moved to make single or multiple passes in front of the substrate per layer, and can pass completely or partially across the substrate.

Claims

1. In a method for the vapor deposition of thin single layer or multilayer films on a substrate, the improvement comprising:

positioning a computer controlled dynamic mask adjacent said substrate to block a portion of deposition material directed toward said substrate,

moving said mask relative to said substrate, and

controlling acceleration, velocity, and position of said dynamic mask by said computer to precisely tailor film thickness distribution.

2. The improvement of claim 1, wherein moving said mask is carried out to enable one or more of linear or rotational movement of said mask.

3. The improvement of claim 1, wherein said dynamic mask is selected from the group consisting of a solid mask, and a mask with a shaped hole therein.

4. The improvement of claim 3, wherein said shaped hole in said dynamic mask is selected from the group consisting of circular, rectangular, and complex shapes optimized for uniformity and deposition rate.

5. The improvement of claim 1, wherein moving said mask is carried out to enable movement of said mask relative to said substrate selected from at least one of linear movement, rotational movement, single pass, multiple pass, partial pass, and complete pass.

6. The improvement of claim 1, additionally including providing said computer with software capable of moving said dynamic mask so as to form a film on said substrate, wherein said film is selected from the group consisting of uniform thickness films and graded thickness films.

7. The method of claim 1 wherein the vapor deposition of thin films on a substrate is carried out by using a deposition source selected from the group consisting of ion beam sputter source, electron-beam evaporation sources, ion-assisted ion beam sputter sources, and ion-assisted electron-beam evaporation sources, and wherein said dynamic mask is moved so to produce a precisely tailored film with either uniform thickness or graded thickness.

8. The method of claim 7, wherein the film is produced to have a uniform thickness to about 0.1% across the substrate.