D/A converter circuit, semiconductor device incorporating the D/A converter circuit, and manufacturing method of them
First Claim
1. A manufacturing method of a D/A converter circuit, comprising the steps of:
- forming a resistor string which includes a plurality of resistors connected in series between reference voltages;
forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors;
disposing all forming parts of the resistors configuring the resistor string within a laser irradiation area; and
crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with a same laser shot,wherein each of the resistors is a thin film element crystallized by linear laser irradiation.
1 Assignment
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Accused Products
Abstract
D/A conversion having higher accuracy is provided by improving relative accuracy of the resistance value of resistors which configure a resistor string. A manufacturing method of a D/A converter circuit of the invention comprises the steps of: forming a resistor string 11 which includes a plurality of resistors R0 to R7 connected in series with each other between reference voltages, and a plurality of switching elements S0 to S3 connected with each connection node of the resistors R0 to R7, wherein: each of the resistors R0 to R7 is a thin film element crystallized by linear laser irradiation; disposing all forming parts of the resistors configuring the resistor string 11 within a laser irradiation area 19; and crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with the same laser shot.
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Citations
28 Claims
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1. A manufacturing method of a D/A converter circuit, comprising the steps of:
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forming a resistor string which includes a plurality of resistors connected in series between reference voltages; forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors; disposing all forming parts of the resistors configuring the resistor string within a laser irradiation area; and crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with a same laser shot, wherein each of the resistors is a thin film element crystallized by linear laser irradiation. - View Dependent Claims (2, 3)
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4. A manufacturing method of a D/A converter circuit, comprising the steps of:
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forming a resistor string which includes a plurality of resistor groups connected in series between reference voltages; forming a plurality of resistors which are connected in series to configure each of the resistor groups; forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors; disposing forming parts of the series-connected resistors of each resistor group within each different laser irradiation area; crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with a same laser shot; and disposing auxiliary resistors so as to be connected in parallel with each resistor group, wherein each of the resistors is a thin film element crystallized by linear laser irradiation; wherein each of the auxiliary resistors has a same resistance value that is sufficiently smaller than a combined resistance value of the resistor group to which each auxiliary resistor is connected. - View Dependent Claims (5, 6, 7)
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8. A manufacturing method of a D/A converter circuit, comprising the steps of:
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forming a resistor string which includes a plurality of resistors connected in series between reference voltages; forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors; disposing all forming parts of the resistors configuring the resistor string within a laser irradiation area; and crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with one laser shot, wherein each of the resistors is a thin film element crystallized by linear laser irradiation. - View Dependent Claims (9, 10)
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11. A manufacturing method of a D/A converter circuit, comprising the steps of:
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forming a resistor string which includes a plurality of resistor groups connected in series between reference voltages; forming a plurality of resistors which are connected in series to configure each of the resistor groups; forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors; disposing forming parts of the series-connected resistors of each resistor group within each different laser irradiation area; crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with one laser shot; disposing auxiliary resistors so as to be connected in parallel with each resistor group, wherein each of the resistors is a thin film element crystallized by linear laser irradiation; wherein each of the auxiliary resistors has a same resistance value that is sufficiently smaller than a combined resistance value of the resistor group to which each auxiliary resistor is connected. - View Dependent Claims (12, 13, 14)
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15. A manufacturing method of a semiconductor device incorporating a D/A converter circuit, comprising the steps of:
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forming a resistor string which includes a plurality of resistors connected in series between reference voltages; forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors; disposing all forming parts of the resistors configuring the resistor string within a laser irradiation area; and crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with a same laser shot, wherein each of the resistors is a thin film element crystallized by linear laser irradiation. - View Dependent Claims (16, 17)
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18. A manufacturing method of a semiconductor device incorporating a D/A converter circuit, comprising the steps of:
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forming a resistor string which includes a plurality of resistor groups connected in series between reference voltages; forming a plurality of resistors so as to be connected in series to configure each of the resistor groups; forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors; disposing forming parts of the series-connected resistors of each resistor group within each different laser irradiation area; crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with a same laser shot; and disposing auxiliary resistors so as to be connected in parallel with each resistor group, wherein each of the resistors is a thin film element crystallized by linear laser irradiation; wherein each of the auxiliary resistors has a same resistance value that is sufficiently smaller than a combined resistance value of the resistor group to which each auxiliary resistor is connected. - View Dependent Claims (19, 20, 21)
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22. A manufacturing method of a semiconductor device incorporating a D/A converter circuit, comprising the steps of:
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forming a resistor string which includes a plurality of resistors connected in series between reference voltages; forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors; disposing all forming parts of the resistors configuring the resistor string within a laser irradiation area; and crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with one laser shot, wherein each of the resistors is a thin film element crystallized by linear laser irradiation. - View Dependent Claims (23, 24)
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25. A manufacturing method of a semiconductor device incorporating a D/A converter circuit, comprising the steps of:
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forming a resistor string which includes a plurality of resistor groups connected in series between reference voltages; forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors; disposing forming parts of the series-connected resistors of each resistor group within each different laser irradiation area; crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with one laser shot; and disposing auxiliary resistors so as to be connected in parallel with each resistor group, wherein each of the resistors is a thin film element crystallized by linear laser irradiation; wherein each of the auxiliary resistors has a same resistance value that is sufficiently smaller than a combined resistance value of the resistor group to which each auxiliary resistor is connected. - View Dependent Claims (26, 27, 28)
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Specification