D/A converter circuit, semiconductor device incorporating the D/A converter circuit, and manufacturing method of them

• US 7,064,023 B2
• Filed: 04/14/2004
• Issued: 06/20/2006
• Est. Priority Date: 04/14/2003
• Status: Expired due to Fees

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.), Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.), Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Miyata, Kazuhiko, Miyake, Hiroyuki, Takahashi, Kei, Koyama, Jun
• Primary Examiner(s): CHAUDHARI, CHANDRA P
• Application Number:
  US10/823,745
• Publication Number:
  US 20040201509A1
• Time in Patent Office: 797 Days
• Field of Search: 438/166, 438/382
• US Class Current: 438/166
• CPC Class Codes: H01L 21/268 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 27/0802 Resistors only
• CPC Class Codes: H01L 28/20 Resistors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H03M 1/685 the quantisation value generators of both converters being arranged in a common two-dimensional array
• CPC Class Codes: H03M 1/76 using switching tree

Abstract

D/A conversion having higher accuracy is provided by improving relative accuracy of the resistance value of resistors which configure a resistor string. A manufacturing method of a D/A converter circuit of the invention comprises the steps of: forming a resistor string 11 which includes a plurality of resistors R0 to R7 connected in series with each other between reference voltages, and a plurality of switching elements S0 to S3 connected with each connection node of the resistors R0 to R7, wherein: each of the resistors R0 to R7 is a thin film element crystallized by linear laser irradiation; disposing all forming parts of the resistors configuring the resistor string 11 within a laser irradiation area 19; and crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with the same laser shot.

Claims

1. A manufacturing method of a D/A converter circuit, comprising the steps of:

forming a resistor string which includes a plurality of resistors connected in series between reference voltages;

forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors;

disposing all forming parts of the resistors configuring the resistor string within a laser irradiation area; and

crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with a same laser shot,

wherein each of the resistors is a thin film element crystallized by linear laser irradiation.

2. The manufacturing method of a D/A converter circuit according to claim 1, wherein each forming part of the resistors is disposed to be parallel with each other, and also to be parallel with a scan direction of the linear laser irradiation.

3. The manufacturing method of a D/A converter circuit according to claim 1, wherein each forming part of the resistors is all formed to have a same shape.

4. A manufacturing method of a D/A converter circuit, comprising the steps of:

forming a resistor string which includes a plurality of resistor groups connected in series between reference voltages;

forming a plurality of resistors which are connected in series to configure each of the resistor groups;

forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors;

disposing forming parts of the series-connected resistors of each resistor group within each different laser irradiation area;

crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with a same laser shot; and

disposing auxiliary resistors so as to be connected in parallel with each resistor group,

wherein each of the resistors is a thin film element crystallized by linear laser irradiation;

wherein each of the auxiliary resistors has a same resistance value that is sufficiently smaller than a combined resistance value of the resistor group to which each auxiliary resistor is connected.

5. The manufacturing method of a D/A converter circuit according to claim 4, wherein:

each of the auxiliary resistors is a thin film element crystallized by laser irradiation;

all forming parts of the auxiliary resistors are disposed within a laser irradiation area; and

all the forming parts of the auxiliary resistors which are disposed within the laser irradiation area are crystallized with a same laser shot.

6. The manufacturing method of a D/A converter circuit according to claim 4, wherein each forming part of the resistors is disposed to be parallel with each other, and also to be parallel with a scan direction of the linear laser irradiation.

7. The manufacturing method of a D/A converter circuit according to claim 4, wherein each forming part of the resistors is all formed to have a same shape.

8. A manufacturing method of a D/A converter circuit, comprising the steps of:

forming a resistor string which includes a plurality of resistors connected in series between reference voltages;

forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors;

disposing all forming parts of the resistors configuring the resistor string within a laser irradiation area; and

crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with one laser shot,

wherein each of the resistors is a thin film element crystallized by linear laser irradiation.

9. The manufacturing method of a D/A converter circuit according to claim 8, wherein each forming part of the resistors is disposed to be parallel with each other.

10. The manufacturing method of a D/A converter circuit according to claim 8, wherein each forming part of the resistors is all formed to have a same shape.

11. A manufacturing method of a D/A converter circuit, comprising the steps of:

forming a resistor string which includes a plurality of resistor groups connected in series between reference voltages;

forming a plurality of resistors which are connected in series to configure each of the resistor groups;

forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors;

disposing forming parts of the series-connected resistors of each resistor group within each different laser irradiation area;

crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with one laser shot;

disposing auxiliary resistors so as to be connected in parallel with each resistor group,

wherein each of the resistors is a thin film element crystallized by linear laser irradiation;

wherein each of the auxiliary resistors has a same resistance value that is sufficiently smaller than a combined resistance value of the resistor group to which each auxiliary resistor is connected.

12. The manufacturing method of a D/A converter circuit according to claim 11, wherein:

each of the auxiliary resistors is a thin film element crystallized by laser irradiation;

all forming parts of the auxiliary resistors are disposed within a laser irradiation area; and

all the forming parts of the auxiliary resistors which are disposed within the laser irradiation area are crystallized with one laser shot.

13. The manufacturing method of a D/A converter circuit according to claim 11, wherein each forming part of the resistors is disposed to be parallel with each other.

14. The manufacturing method of a D/A converter circuit according to claim 11, wherein each forming part of the resistors is all formed to have a same shape.

15. A manufacturing method of a semiconductor device incorporating a D/A converter circuit, comprising the steps of:

forming a resistor string which includes a plurality of resistors connected in series between reference voltages;

forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors;

disposing all forming parts of the resistors configuring the resistor string within a laser irradiation area; and

crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with a same laser shot,

wherein each of the resistors is a thin film element crystallized by linear laser irradiation.

16. The manufacturing method of a semiconductor device incorporating a D/A converter circuit according to claim 15, wherein each forming part of the resistors is disposed to be parallel with each other, and also to be parallel with a scan direction of the linear laser irradiation.

17. The manufacturing method of a semiconductor device incorporating a D/A converter circuit according to claim 15, wherein each forming part of the resistors is all formed to have a same shape.

18. A manufacturing method of a semiconductor device incorporating a D/A converter circuit, comprising the steps of:

forming a resistor string which includes a plurality of resistor groups connected in series between reference voltages;

forming a plurality of resistors so as to be connected in series to configure each of the resistor groups;

forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors;

disposing forming parts of the series-connected resistors of each resistor group within each different laser irradiation area;

crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with a same laser shot; and

disposing auxiliary resistors so as to be connected in parallel with each resistor group,

wherein each of the resistors is a thin film element crystallized by linear laser irradiation;

wherein each of the auxiliary resistors has a same resistance value that is sufficiently smaller than a combined resistance value of the resistor group to which each auxiliary resistor is connected.

19. The manufacturing method of a semiconductor device incorporating a D/A converter circuit according to claim 18, wherein:

each of the auxiliary resistors is a thin film element crystallized by laser irradiation;

all forming parts of the auxiliary resistors are disposed within a laser irradiation area; and

all the forming parts of the auxiliary resistors which are disposed within the laser irradiation area are crystallized with a same laser shot.

20. The manufacturing method of a semiconductor device incorporating a D/A converter circuit according to claim 18, wherein each forming part of the resistors is disposed to be parallel with each other, and also to be parallel with a scan direction of the linear laser irradiation.

21. The manufacturing method of a semiconductor device incorporating a D/A converter circuit according to claim 18, wherein each forming part of the resistors is all formed to have a same shape.

22. A manufacturing method of a semiconductor device incorporating a D/A converter circuit, comprising the steps of:

forming a resistor string which includes a plurality of resistors connected in series between reference voltages;

forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors;

disposing all forming parts of the resistors configuring the resistor string within a laser irradiation area; and

crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with one laser shot,

wherein each of the resistors is a thin film element crystallized by linear laser irradiation.

23. The manufacturing method of a semiconductor device incorporating a D/A converter circuit according to claim 22, wherein each forming part of the resistors is disposed to be parallel with each other.

24. The manufacturing method of a semiconductor device incorporating a D/A converter circuit according to claim 22, wherein each forming part of the resistors is all formed to have a same shape.

25. A manufacturing method of a semiconductor device incorporating a D/A converter circuit, comprising the steps of:

forming a resistor string which includes a plurality of resistor groups connected in series between reference voltages;

forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors;

disposing forming parts of the series-connected resistors of each resistor group within each different laser irradiation area;

crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with one laser shot; and

disposing auxiliary resistors so as to be connected in parallel with each resistor group,

wherein each of the resistors is a thin film element crystallized by linear laser irradiation;

wherein each of the auxiliary resistors has a same resistance value that is sufficiently smaller than a combined resistance value of the resistor group to which each auxiliary resistor is connected.

26. The manufacturing method of a semiconductor device incorporating a D/A converter circuit according to claim 25, wherein:

each of the auxiliary resistors is a thin film element crystallized by laser irradiation;

all forming parts of the auxiliary resistors are disposed within a laser irradiation area; and

all the forming parts of the auxiliary resistors which are disposed within the laser irradiation area are crystallized with one laser shot.

27. The manufacturing method of a semiconductor device incorporating a D/A converter circuit according to claim 25, wherein each forming part of the resistors is disposed to be parallel with each other.

28. The manufacturing method of a semiconductor device incorporating a D/A converter circuit according to claim 25, wherein each forming part of the resistors is all formed to have a same shape.