Spiro silane compound and organic electroluminescent device using the same

• US 7,064,228 B1
• Filed: 11/15/2005
• Issued: 06/20/2006
• Est. Priority Date: 09/21/2005
• Status: Active Grant

• Current Assignee: AU Optronics Corporation
• Original Assignee: AU Optronics Corporation
• Inventors: Yu, Chen-Ping, Wu, Pei-Chi
• Primary Examiner(s): BARTS, SAMUEL A
• Application Number:
  US11/274,700
• Time in Patent Office: 217 Days
• Field of Search: 556/489, 313/504, 313/506, 428/690, 428/917
• US Class Current: 556/489
• CPC Class Codes: C07F 7/0805 comprising only Si, C or H atoms
• CPC Class Codes: Y10S 428/917 Electroluminescent

Abstract

A spiro silane compound can be applied in the organic electroluminescent device as the host material of the light emission layer, and represented by the following formula:

• • wherein Ar₁, Ar₂ and Ar₃ are independently selected from the group consisting of a phenyl group, a spirobifluorene group and an alkyl group.

Claims

1. A spiro silane compound represented by a general formula:

2. The spiro silane compound of claim 1, wherein each of Ar₁, Ar₂ and Ar₃ represents the phenyl group, the spiro silane compound is 2-triphenylsily-9,9′

-spirobifluorene, and represented by the following formula;

3. The spiro silane compound of claim 1, wherein each of Ar₁, and Ar₂ represents the phenyl group, and Ar₃ represents the spirobifluorene group, the spiro silane compound is diphenyl-di(2-9,9′

-spirobifluorenyl) silane, and represented by the following formula;

4. The spiro silane compound of claim 1, wherein each of Ar₁, and Ar₂ represents the spirobifluorene group, and Ar₃ represents the phenyl group, the spiro silane compound is phenyl-tri(2-9,9′

-spirobifluorenyl) silane, and represented by the following formula;

5. The spiro silane compound of claim 1, wherein each of Ar₁, Ar₂ and Ar₃ represents the spirobifluorene group, the spiro silane compound is tetra(2-9,9′

-spirobifluorenyl) silane, and represented by the following formula;

6. An organic electroluminescence device (OELD), comprising:

an anode;

a hole transport layer formed over the anode;

an organic light emitting layer formed over the hole transport layer;

an electron transport layer formed above the organic light emitting layer, the electron transport layer including a Spiro silane compound represented by the general formula;

7. The OELD of claim 6, wherein the spiro silane compound is a host material of the organic light emitting layer.

8. The OELD of claim 6, wherein the organic light emitting layer comprises a metal complex as a dopant.

9. The OELD of claim 8, wherein the metal complex comprises an iridium complex, a Pt complex or an Os complex.

10. The OELD of claim 8, wherein the metal complex is an iridium complex, and represented by the following formula:

11. The OELD of claim 6, wherein the hole transport layer comprises N,N′

-di-1-naphthyl-N,N′

-diphenyl-1,1′

-biphenyl-1,1′

-biphenyl-4,4′

-diamine (NPB).

12. The OELD of claim 6, further comprising:

a hole injection layer disposed between the anode and the hole transport layer.

13. The OELD of claim 12, wherein the hole injection layer comprises 4,4′

,4″

-tri(N-(2-naphthyl)-N-aniline)-triphenyl amine (2T-NATA).

14. The OELD of claim 6, wherein the electron transport layer comprises 1,1′

-Bisphenyl-4-olato)bis(2-methyl-8-quinolinplate-N1,08)Aluminum (III) (BAlq).

15. The OELD of claim 6, further comprising:

an electron injection layer disposed between the cathode and the electron transport layer.

16. The OELD of claim 6, further comprising:

a buffer layer disposed between the organic light emitting layer and the hole transport layer.

17. The OELD of claim 16, wherein the buffer layer comprises N,N′

-dicarbazole-1,3-benzene (mCP).