Organic field effect transistor with off-set threshold voltage and the use thereof
First Claim
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1. An OFET, having a threshold voltage, comprising:
- a substrate;
an active semiconductor layer; and
an intermediate layer adjacent to the active semiconductive layer, which intermediate layer offsets the threshold voltage of the OFET by defining a space charge region in the active layer.
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Abstract
The invention relates to an organic field effect transistor with off-set threshold voltage. Said OFET has an intermediate layer that defines a space charge region between the insulator and the semiconductor.
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Citations
14 Claims
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1. An OFET, having a threshold voltage, comprising:
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a substrate; an active semiconductor layer; and an intermediate layer adjacent to the active semiconductive layer, which intermediate layer offsets the threshold voltage of the OFET by defining a space charge region in the active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification