Structure and programming of laser fuse
First Claim
1. An electronic structure, comprising:
- a first dielectric layer having at least first and second vias filled with a first self-passivated electrically conducting material;
a fuse link on top of the first dielectric layer, the fuse link electrically connecting the first and second vias and comprising a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam; and
first and second mesas directly above the fuse link and directly above the first and second vias, respectively, the first and second mesas each comprising a third self-passivated electrically conducting material, wherein the fuse link is disposed between the first mesa and the first dielectric layer, and wherein the fuse link is disposed between the second mesa and the first dielectric layer.
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Accused Products
Abstract
A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a first dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the first dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.
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Citations
7 Claims
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1. An electronic structure, comprising:
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a first dielectric layer having at least first and second vias filled with a first self-passivated electrically conducting material; a fuse link on top of the first dielectric layer, the fuse link electrically connecting the first and second vias and comprising a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam; and first and second mesas directly above the fuse link and directly above the first and second vias, respectively, the first and second mesas each comprising a third self-passivated electrically conducting material, wherein the fuse link is disposed between the first mesa and the first dielectric layer, and wherein the fuse link is disposed between the second mesa and the first dielectric layer. - View Dependent Claims (2, 3, 4)
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5. An electronic structure, comprising:
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a first dielectric layer having at least a first via and a second via both filled with a first electrically conducting material; a first oxygen-getter shield and a second oxygen-getter shield being directly above the first and second filled vias and in direct physical contact with the first electrically conducting material in the first and second vias, respectively, the first and second oxygen-getter shields comprising a second electrically conducting, oxygen-getter material; and a fuse link electrically connecting the first and second oxygen-getter shields, the fuse link comprising a third material having a characteristic of changing its electrical resistance after being exposed to a laser beam, wherein first and second regions of the first and second oxygen-getter shields, respectively, are directly above the fuse link, such that the fuse link is disposed between the first region of the first oxygen-getter shield and the first dielectric layer, and such that the fuse link is disposed between the second region of the second oxygen-getter shield and the first dielectric. - View Dependent Claims (6, 7)
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Specification