Structure and programming of laser fuse

• US 7,064,409 B2
• Filed: 11/04/2003
• Issued: 06/20/2006
• Est. Priority Date: 11/04/2003
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: International Business Machines Corporation
• Inventors: Muzzy, Christopher D., Lee, Tom C., Wynne, Jean E., Watson, Kimball M., Matusiewicz, Gerald, Li, Baozhen, Badami, Dinesh A., Motsiff, William T.
• Primary Examiner(s): Nadav, Ori
• Application Number:
  US10/605,885
• Publication Number:
  US 20050093091A1
• Time in Patent Office: 959 Days
• Field of Search: 257/209, 257/529, 257/665
• US Class Current: 257/529
• CPC Class Codes: H01L 23/525 with adaptable interconnections
• CPC Class Codes: H01L 23/5254 the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
• CPC Class Codes: H01L 23/5258 the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a first dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the first dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.

Claims

1. An electronic structure, comprising:

a first dielectric layer having at least first and second vias filled with a first self-passivated electrically conducting material;

a fuse link on top of the first dielectric layer, the fuse link electrically connecting the first and second vias and comprising a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam; and

first and second mesas directly above the fuse link and directly above the first and second vias, respectively, the first and second mesas each comprising a third self-passivated electrically conducting material, wherein the fuse link is disposed between the first mesa and the first dielectric layer, and wherein the fuse link is disposed between the second mesa and the first dielectric layer.

2. The electronic structure of claim 1, wherein the second material comprises a substance selected from the group consisting of TaN, TiN, and WN.

3. The electronic structure of claim 1, wherein the first self-passivated electrically conducting material comprises a substance selected from the group consisting of Al and W.

4. The electronic structure of claim 1, wherein the third self-passivated electrically conducting material comprises a substance selected from the group consisting of Al and W.

5. An electronic structure, comprising:

a first dielectric layer having at least a first via and a second via both filled with a first electrically conducting material;

a first oxygen-getter shield and a second oxygen-getter shield being directly above the first and second filled vias and in direct physical contact with the first electrically conducting material in the first and second vias, respectively, the first and second oxygen-getter shields comprising a second electrically conducting, oxygen-getter material; and

a fuse link electrically connecting the first and second oxygen-getter shields, the fuse link comprising a third material having a characteristic of changing its electrical resistance after being exposed to a laser beam, wherein first and second regions of the first and second oxygen-getter shields, respectively, are directly above the fuse link, such that the fuse link is disposed between the first region of the first oxygen-getter shield and the first dielectric layer, and such that the fuse link is disposed between the second region of the second oxygen-getter shield and the first dielectric.

6. The electronic structure of claim 5, further comprising a first mesa and a second mesa being directly above and in direct physical contact with the first and second oxygen-getter shields, respectively, such that the first oxygen-getter shield is disposed between the first mesa and the first dielectric layer and such that the second oxygen-getter shield is disposed between the second mesa and the first dielectric layer, the first and second mesas comprising a fourth electrically conducting material.

7. The electronic structure of claim 5, wherein the second electrically conducting, oxygen-getter material comprises titanium.