Semi-conductor interconnect using free space electron switch

• US 7,064,500 B2
• Filed: 10/04/2004
• Issued: 06/20/2006
• Est. Priority Date: 05/26/2000
• Status: Expired due to Fees

• Current Assignee: Exaconnect Corporation
• Original Assignee: Exaconnect Corporation
• Inventors: Silzars, Aris, Mansour, Gerald G, Victor, Michel N
• Primary Examiner(s): Dinh, Trinh Vo
• Application Number:
  US10/958,195
• Publication Number:
  US 20050162104A1
• Time in Patent Office: 624 Days
• Field of Search: 315/169.3
• US Class Current: 315/321
• CPC Class Codes: H01J 31/06 with more than two output electrodes, e.g. for multiple switching or counting

Abstract

An apparatus and method for electrically connecting semi-conductor devices is disclosed. The apparatus and method employs a vacuum chamber and first and second semi-conductor components. The first and second semi-conductor components are coupled to a vacuum chamber and free space electron transmitters and receivers. The transmitters are configured to transmit a signals between the semi-conductor components.

Claims

1. An electronic component comprising:

first and second substrates;

a first member disposed between said first and a second substrates, said first member defining a vacuum chamber;

a first semi-conductor component coupled to the first substrate, said first semi-conductor component in connection with a first free space electron transmitter and a first free space electron receiver disposed within said vacuum chamber;

a second semi-conductor component coupled to the second substrate, said second semi-conductor component in connection with a second free space electron transmitter and a second free space electron receiver disposed within said vacuum chamber;

wherein said first transmitter is a cold cathode configured to transmit a signal from said first semi-conductor component to the second free space electron receiver and wherein said second transmitter is configured to transmit a signal from said second semi-conductor component to the first free space electron receiver.

2. The electronic component according to claim 1 wherein, the cold cathode is a thin film diamond structure.

3. The electronic component according to claim 1 wherein the first and second semi-conductor components are disposed outside of said vacuum chamber.

4. The electronic component according to claim 1 wherein said first semi-conductor component is one of an analog computational logic component and a digital computational logic component.

5. The electronic component, according to claim 1 wherein said first semi-conductor component is one of an analog signal processing component and a digital signal processing component.

6. The electronic component according to claim 4 wherein said second semi-conductor component is a microprocessor.

7. The electronic component according to claim 1 further comprising a high pass filter electrically disposed between the first free space electron receiver and said first semi-conductor component.

8. The electronic component according to claim 7 wherein the high pass filter is operable to block the D.C. high voltage component of the signal.

9. The electronic component according to claim 7 wherein the high pass filter comprises a capacitor and is operable to allow signals greater than 100 hz to reach said first semi-conductor.

10. The electronic component according to claim 1 further comprising a high pass filter electrically disposed between said second free space electron receiver and said second semi-conductor component.

11. The electronic component according to claim 1 further comprising a third semi-conductor device coupled to the first ceramic substrate and a fourth semi-conductor device disposed on the second ceramic substrate.

12. The electronic the component according to claim 11 wherein said first free space electron transmitter comprises, a cold cathode array, said cathode array including a plurality of cold cathodes, each of said cathodes operable to emit electrons;

an anode grid, said anode grid including a plurality of aiming anodes, each of said aiming anodes defining a channel, each anode operable to aim an electron beam formed from the electrons emitted from one of said cathodes; and

a focusing grid and an accelerating grid disposed between said cathode array and said second free space electron receiver, said focusing grid and accelerating grid being operable to control the flow of electrons from each of said cathodes into each of said channels.

13. The electronic the component according to claim 12 wherein said first free space electron receiver comprises:

plurality of the output ports, each output port operable to receive an electron beam from at least one cathode.

14. The electronic the component according to claim 12 wherein each of said aiming anodes extend in two dimensions of each said cathodes such that the channels have a surrounding periphery of aiming anodes.

15. The electronic the component according to claim 12 wherein each of said aiming anodes are responsive to a charge which is configured to selectively aim the emitted electrons to an output port.

16. An electronic component comprising:

a vacuum chamber;

a first semi-conductor component coupled to the vacuum chamber, said first semi-conductor component connected to a first free space electron transmitter and a first free space electron receiver disposed within said vacuum chamber;

a second semi-conductor component coupled to said vacuum chamber, said second semi-conductor component connected to a second free space electron transmitter and a second free space electron receiver disposed within said vacuum chamber;

wherein said first transmitter is a cold cathode emitter configured to transmit a signal from said first semi-conductor component to the second free space electron receiver and wherein said second transmitter is configured to transmit a signal from said second semi-conductor component to the first free space electron receiver.

17. The electronic component according to claim 16 wherein the first semi-conductor component is disposed within said vacuum chamber.

18. The electronic component according to claim 16 wherein said first semi-conductor component is a microprocessor.

19. The electronic component, according to claim 16 wherein said first semi-conductor component is a RAM.

20. The electronic component according to claim 16 wherein the electronic component is selected from the group of server cluster interconnect, ethernet, or gigabit ethernet.