Current mirror biasing circuit with power control for HBT power amplifiers

• US 7,064,614 B2
• Filed: 07/09/2004
• Issued: 06/20/2006
• Est. Priority Date: 07/09/2004
• Status: Expired due to Fees

• Current Assignee: Amptech Incorporated
• Original Assignee: Xindium Technologies, Inc.
• Inventors: Feng, Jeffrey T., Caruth, David Charles
• Primary Examiner(s): Mottola, Steven J.
• Application Number:
  US10/888,198
• Publication Number:
  US 20060006947A1
• Time in Patent Office: 711 Days
• Field of Search: 330/288, 330/296
• US Class Current: 330/296
• CPC Class Codes: G05F 3/265 using bipolar transistors only
• CPC Class Codes: H03F 1/302 in bipolar transistor amplifiers H03F1/303, H03F1/305, H03F1/307 take precedence
• CPC Class Codes: H03F 3/3066 the collectors of complementary power transistors being connected to the output
• CPC Class Codes: H03F 3/343 with semiconductor devices only

Abstract

An electronic circuit includes a current mirror bias circuit and a power amplifier that has a power transistor for amplifying radio frequency signals such that the output collector current of the power transistor is approximately constant over a wide range of varying power supply voltages. The power transistor is biased by a current mirror biasing circuit that has a reference voltage that maintains the quiescent DC collector current at an approximately constant value. The reference voltage may be varied to provide control of the output power of the power amplifier.

Claims

1. An electronic circuit comprising:

a power amplifier having a radio frequency (“

RF”

) power transistor for amplifying radio frequency signals such that a quiescent DC collector current in the RF power transistor is approximately constant over an operational range of collector voltages supplied from a collector power supply;

a power amplifier bias transistor that biases the RF power transistor;

a current mirror bias transistor having an operating area such that the current mirror bias transistor has substantially a same current density as the power amplifier bias transistor when the current mirror bias transistor and the power amplifier bias transistor are biased from a reference voltage supply that supplies a reference voltage controlling an output power of the power amplifier and remains approximately constant as the collector voltage varies through the operational range;

a current mirror transistor biased by emitter current from the current mirror bias transistor and having an operating area such that a quiescent DC collector current density is about equal to a quiescent DC current density of the RF power transistor; and

a first base ballast resistor and a second base ballast resistor, the first base ballast resistor placed between an emitter of the current mirror bias transistor and a base of the current mirror transistor and having a resistance for a voltage drop that is about equal to a voltage drop across the second base ballast resistor placed between an emitter of the power amplifier bias transistor and a base of the RF power transistor.

2. The electronic circuit as recited in claim 1, wherein the RF power transistor, the power amplifier bias transistor, the current mirror transistor and the current mirror bias transistor are formed on the same die.

3. The electronic circuit as recited in claim 1, wherein the reference voltage is set to any voltage within a control range of voltages.

4. The electronic circuit as recited in claim 3, wherein the control range of voltages controls the output power of the power amplifier.

5. The electronic circuit as recited in claim 1, wherein the current mirror bias transistor and the power amplifier bias transistor are biased in parallel to one another.

6. The electronic circuit as recited in claim 1, wherein an operating area of the power amplifier bias transistor is a multiple of the operating area of the current mirror bias transistor.

7. The electronic circuit as recited in claim 1, wherein an operating area of the RF power transistor is a multiple of an operating area of the current mirror transistor.

8. The electronic circuit as recited in claim 1, further comprising a temperature compensation resistor connecting a point between the emitter of the power amplifier bias transistor and the second base ballast resistor and a point between the emitter of the current mirror bias transistor and the first base ballast resistor.

9. The electronic circuit as recited in claim 1, where the quiescent DC collector current densities are about equal in the RF power transistor, the current mirror transistor, the power amplifier bias transistor and the current mirror bias transistor.

10. An electronic circuit comprising:

a power amplifier including a radio frequency (“

RF”

) power transistor for amplifying radio frequency signals such that a quiescent DC collector current of the RF power transistor is approximately constant over an operational range of supply voltage from a collector power supply;

a power amplifier bias transistor that biases the RF power transistor;

a current mirror transistor that mirrors the quiescent DC collector current in the RF power transistor;

a current mirror bias transistor for establishing a reference current that flows as a collector current in the current mirror; and

a first base ballast resistor and a second base ballast resistor, the first base ballast resistor placed between an emitter of the current mirror bias transistor and a base of the current mirror transistor and having a resistance for a voltage drop that is about equal to a voltage drop across the second base ballast resistor placed between an emitter of the power amplifier bias transistor and a base of the RF power transistor,

wherein the current mirror bias transistor and the power amplifier bias transistor are adapted to be biased from a reference voltage sourced from a power supply supplying a set reference voltage within a control range of voltages, and the set reference voltage remains approximately constant over the operational range of the supply voltage from the collector power supply.

11. The electronic circuit as recited in claim 10, wherein the set reference voltage is selected for controlling an output power of the power amplifier cell.

12. The electronic circuit as recited in claim 10, wherein the quiescent DC collector current densities are approximately equal in the RF power transistor, the power amplifier bias transistor, the current mirror transistor and the current mirror bias transistor.

13. An electronic circuit comprising:

a radio frequency (“

RF”

) power amplifier including at least one power transistor element for amplifying radio frequency signals at varying power levels such that a DC quiescent collector current for the RF power transistor is approximately constant over an operational range of collector voltages for a selected reference voltage;

a power amplifier bias transistor for biasing the power transistor;

a current mirror transistor that mirrors a DC quiescent collector current in the RF power transistor;

a current mirror bias transistor for biasing the current mirror transistor, the current mirror bias transistor and the power amplifier bias transistor are adapted to be biased from a reference voltage sourced from a power supply separate from a power supply supplying the collector voltage for the RF power transistor, the reference supply voltage remaining about constant at the selected reference voltage over an operational range of collector; and

a first base ballast resistor and a second base ballast resistor, the first base ballast resistor placed between an emitter of the current mirror bias transistor and a base of the current mirror transistor and having a resistance for a voltage drop that is about equal to a voltage drop across the second base ballast resistor placed between an emitter of the power amplifier bias transistor and a base of the RF power transistor.

14. The electronic circuit recited in claim 13, wherein the selected reference voltage is selected within a control range of values to vary the output power of the power amplifier.