Electron affinity engineered VCSELs
First Claim
1. A VCSEL system comprising:
- a substrate;
a first mirror stack situated on the substrate;
an active region situated on the first mirror stack;
a second mirror stack situated on the active region;
wherein;
the first mirror stack comprises a plurality of pairs of AlAs and GaAs layers;
at least one interface of first and second interfaces, is situated between each AlAs layer and GaAs layer;
the first interface comprises;
a ramp increase of Al from GaAs to AlxGa1−
xAs; and
a step increase of Al from AlxGa1−
xAs to AlyGa1−
yAs; and
the second interface comprises;
a step decrease of Al from AlyGa1−
yA to AlxGa1−
xAs; and
a ramp decrease of Al from AlxGa1−
xAs to GaAs; and
wherein x ramps to a final value that is ≦
0.4 for the first and second interfaces.
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Abstract
A VCSEL having an N-type Bragg mirror with alternating layers of high bandgap (low index) and low bandgap (high index) layers of AlGaAs. The layers may be separated by a step change of Al composition followed by a graded region, and vice versa for the next layer, in the N-type mirror to result in a lower and more linear series resistance. Also, an N-type spacer layer may be adjacent to an active region of quantum wells. There may be a similar step in a change of Al composition from the nearest layer of the N-type mirror to the N-type spacer formed from a lower bandgap direct AlGaAs layer to provide lower free carrier absorption. With electron affinity engineering, a minority carrier hole barrier may be inserted adjacent to the quantum wells to improve hole confinement at high current density and high temperature.
176 Citations
38 Claims
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1. A VCSEL system comprising:
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a substrate; a first mirror stack situated on the substrate; an active region situated on the first mirror stack; a second mirror stack situated on the active region; wherein; the first mirror stack comprises a plurality of pairs of AlAs and GaAs layers; at least one interface of first and second interfaces, is situated between each AlAs layer and GaAs layer; the first interface comprises; a ramp increase of Al from GaAs to AlxGa1−
xAs; anda step increase of Al from AlxGa1−
xAs to AlyGa1−
yAs; andthe second interface comprises; a step decrease of Al from AlyGa1−
yA to AlxGa1−
xAs; anda ramp decrease of Al from AlxGa1−
xAs to GaAs; andwherein x ramps to a final value that is ≦
0.4 for the first and second interfaces. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A VCSEL system comprising:
a first mirror; and
wherein;the first mirror comprises a plurality of pairs of layers; each pair of layers of the plurality of pairs has a first layer and a second layer; the first layer comprises AxB1−
xC;the second layer comprises AyB1−
yC;x+y=1; a transition layer is situated between each first layer and each second layer; the transition layer, in a direction of a first layer to a second layer, has a ramp change in content of A from x=a first value of x to a second value of x=P, wherein P is less than 0.4, and a step change in content of A from x=P to y; the transition layer in a direction of a second layer to a first layer, has a step change in content of A from y to y=P and a ramp change from P to the first value of x. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A VCSEL system comprising:
a first mirror; and
wherein;the first mirror comprises a plurality of pairs of layers; each pair of layers has a first layer and a second layer; the first layer comprises AxC; the second layer comprises AyC; x+y=1; a transition layer is situated between each first layer and a second layer; the transition layer, in a direction of a first layer to a second layer, has a first change from x to P, and a second change from P to y, wherein P≦
0.4 for the direction of a first layer to a second layer;the transition layer in a direction of a second layer to a first layer, has a third change from y to P, and fourth change from P to x; and
P≦
1 for the direction of a second layer to the first layer.- View Dependent Claims (34, 35, 36)
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37. A VCSEL system comprising:
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a substrate; a first mirror stack situated on the substrate; an active region situated on the first mirror stack; a second mirror stack situated on the active region; wherein; the first mirror stack comprises a plurality of pairs of AlxGa1−
xAs and AlyGa1−
yAs layers;an interface between each AlxGa1−
xAs layer and AlyGa1−
yAs layer;the interface comprises; at least one linear ramp change of Al composition from x=first value to x≦
a second value, the second value less than 0.4; and
at least one step change of Al composition from the second value to a third value.
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38. A VCSEL system comprising:
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a substrate; a first mirror stack formed over the substrate, the first mirror having pairs of layers, each pair having a first layer and a second layer; an active region including a plurality of quantum wells formed over the first mirror stack; a second mirror stack formed over the active region, the second mirror stack having pairs of layers, each pair including a third layer and a fourth layer; a first spacer layer between the active region and the first mirror stack and a second spacer layer between the active region and the second mirror stack; and an interface formed between the first layer and second layer of each pair in the first mirror stack, the interface comprising; a first portion where a composition of a first element ramps from a first value to a second value, and a step in the composition from the second value to a third value, the second value selected such that electron affinity on a first side of the step is substantially the same as an electron affinity on a second side of the step.
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Specification