Semiconductor apparatus and fabrication method of the same

• US 7,067,392 B2
• Filed: 10/16/2003
• Issued: 06/27/2006
• Est. Priority Date: 10/18/2002
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ohno, Yumiko, Takayama, Toru, Maruyama, Junya, Yamazaki, Shunpei
• Primary Examiner(s): THAI, LUAN C
• Application Number:
  US10/685,398
• Publication Number:
  US 20040079941A1
• Time in Patent Office: 985 Days
• Field of Search: 438/455, 438106-107, 438/149, 438/459
• US Class Current: 438/455
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 23/12 Mountings, e.g. non-detachable insulating substrates
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/87 Arrangements for heating or cooling
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/17 Passive-matrix OLED displays
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/80 using temporary substrates
• CPC Class Codes: H10K 77/111 Flexible substrates
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.

Claims

1. A method for manufacturing a semiconductor apparatus comprising:

forming a release layer including a semiconductor device over a first substrate;

coating an organic resin film that melts with solvent over the release layer;

bonding a second substrate to the organic resin film with a first two-sided tape to sandwich the release layer and the organic resin film between the first substrate and the second substrate;

bonding a third substrate to the first substrate with a second two-sided tape;

separating the first substrate to which the third substrate is bonded from the release layer by a physical means;

bonding a fourth substrate to the release layer to sandwich the release layer between the second substrate and the fourth substrate;

separating the release layer and the first two-sided tape from the second substrate;

separating the release layer from the first two-sided tape; and

removing the organic resin film with solvent.

2. A method according to claim 1, wherein the solvent is water or alcohol.

3. A method according to claim 1, wherein adhesiveness of the first two-sided tape and the second substrate in the seventh process is stronger than that of the release layer and the fourth substrate.

4. A method for manufacturing a semiconductor apparatus comprising:

forming a release layer including a semiconductor device over a first substrate;

coating an organic resin film that melts with solvent over the release layer;

bonding a second substrate to the organic resin film with a first two-sided tape to sandwich the release layer and the organic resin film between the first substrate and the second substrate;

bonding a third substrate to the first substrate with the second two-sided tape;

separating the first substrate to which the third substrate is bonded from the release layer by a physical means;

bonding a fourth substrate to the release layer to sandwich the release layer between the second substrate and the fourth substrate;

separating the release layer and first two-sided tape from the second substrate;

separating the release layer from the first two-sided tape;

removing the organic resin film with solvent; and

bonding a fifth substrate to the release layer with a second adhesive to sandwich the release layer between the fourth substrate and the fifth substrate.

5. A method according to claim 4, wherein the solvent is water or alcohol.

6. A method according to claim 4, wherein adhesiveness of the first two-sided tape and the second substrate in the seventh process is stronger than that of the release layer and the fourth substrate.

7. A method according to claim 4, wherein the first substrate is a glass substrate, the second and the third substrates are a quartz substrate or a metal substrate, and the fourth substrate and the fifth substrate are plastic substrates.

8. A method according to claim 4, wherein the first substrate is a glass substrate, the second and the third substrates are a quartz substrate or a metal substrate, and among the fourth and the fifth substrate, one is a plastic substrate being transparent to light and another is a plastic substrate having thermal conductivity.

9. A method according to claim 4, wherein the fourth or the fifth substrate is a plastic substrate on the surface of which a SiN_x film, a SiN_xO_y film, an AlN_x film, or an AlN_xO_y film is formed.

10. A method for manufacturing a semiconductor apparatus comprising:

forming a release layer including a TFT over a first substrate;

coating an organic resin film that melts with solvent over the release layer;

bonding a second substrate to the organic resin film with a first two-sided tape to sandwich the release layer and the organic resin film between the first substrate and the second substrate;

bonding a third substrate to the first substrate with the second two-sided tape;

separating the first substrate to which the third substrate is bonded from the release layer by a physical means;

bonding a fourth substrate to the release layer with a first adhesive to sandwich the release layer between the second substrate and the fourth substrate;

separating the release layer and the first two-sided tape from the second substrate;

separating the release layer from the first two-sided tape;

removing the organic resin film with solvent;

fabricating a light-emitting device including an organic compound over the release layer; and

bonding a fifth substrate for sealing the light-emitting device to the release layer with a second adhesive to sandwich the release layer between the fourth substrate and the fifth substrate.

11. A method according to claim 10, wherein the solvent is water or alcohol.

12. A method according to claim 10, wherein adhesiveness of the first two-sided tape and the second substrate in the seventh process is stronger than that of the release layer and the fourth substrate.

13. A method according to claim 12, wherein the solvent is water or alcohol.

14. A method according to claim 10, wherein the first substrate is a glass substrate, the second and the third substrates are a quartz substrate or a metal substrate, and the fourth substrate and the fifth substrate are plastic substrates.

15. A method according to claim 14, wherein adhesiveness of the first two-sided tape and the second substrate in the seventh process is stronger than that of the release layer and the fourth substrate.

16. A method according to claim 10, wherein the first substrate is a glass substrate, the second and the third substrates are a quartz substrate or a metal substrate, and among the fourth and the fifth substrate, one is a plastic substrate being transparent to light and another is a plastic substrate having thermal conductivity.

17. A method according to claim 10, wherein the fourth or the fifth substrate is a plastic substrate on the surface of which a SiN_x film, a SiN_xO_y film, an AlN_x film, or an AlN_xO_y film is formed.