Method of producing a thin layer of semiconductor material

• US 7,067,396 B2
• Filed: 02/23/2004
• Issued: 06/27/2006
• Est. Priority Date: 05/15/1996
• Status: Expired due to Fees

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Original Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Inventors: Aspar, Bernard, Bruel, Michel, Poumeyrol, Thierry
• Primary Examiner(s): FOURSON III, GEORGE R
• Application Number:
  US10/784,601
• Publication Number:
  US 20040166651A1
• Time in Patent Office: 855 Days
• Field of Search: 257/E21.568, 438/459, 438/977, 438/460, 438/455, 438/458, 438/406, 438/FOR.485, 148/DIG.12
• US Class Current: 438/459
• CPC Class Codes: G03F 7/70541 Tagging, i.e. hardware or software tagging of features or components, e.g. using tagging scripts or tagging identifier codes for identification of chips, shots or wafers
• CPC Class Codes: H01L 21/304 Mechanical treatment, e.g. grinding, polishing, cutting H01L21/30625 takes precedence
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate
• CPC Class Codes: Y10T 428/24612 Composite web or sheet

Abstract

The invention relates to a method of producing a thin layer of semiconductor material including:

• • a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face,
  • a thermal treatment step in order to achieve coalescence of the microcavities
  • possibly, a step of creating at least one electronic component (5) in the thin layer (6),
  • a separation step of separating the thin layer (6) from the rest (7) of the wafer.

Claims

1. A method for producing a thin film comprising:

providing a first substrate having a face surface;

introducing hydrogen ions into the first substrate at the face surface, such that microcavities are formed in the first substrate during or after introducing the ions, wherein the microcavities define a thin film layer extending from the face surface to the microcavities, the microcavities reside between solid bridges of the first substrate, and the hydrogen ions are introduced into the first substrate at a temperature and at a total amount so as not to fracture the solid bridges during energizing of the first substrate;

bonding a second substrate to the face surface of the first substrate; and

applying mechanical forces to fracture the solid bridges.

2. The method for producing a thin film according to claim 1, further comprising applying energy to the first substrate.

3. The method for producing a thin film according to claim 2, wherein applying energy comprises applying thermal energy.

4. The method for producing a thin film according claim 2, wherein applying energy comprises applying energy after introducing hydrogen ions.

9. The method for producing a thin film according to claim 1, wherein providing a first substrate comprises providing a substrate including silicon, and wherein the hydrogen ions are introduced into the first substrate at a temperature of about 350°

C.

10. The method for producing a thin film according to claim 9, wherein introducing hydrogen ions into the first substrate comprises hydrogen ion implantation with a dose less than about 4E16 ions per square centimeter.

11. The method for producing a thin film according to claim 10, wherein introducing hydrogen ions into the first substrate comprises hydrogen ion implantation with a dose greater than about 1E16 ions per square centimeter.

12. The method for producing a thin film according to claim 1 further comprising thermally treating the first substrate at a temperature greater than about 350°

C. after introducing hydrogen ions.

5. A method for producing a thin film comprising:

providing a first substrate having a face surface;

introducing hydrogen ions into the first substrate at the face surface and forming microcavities in the first substrate, wherein the microcavities define a thin film layer extending from the face surface to the microcavities, the microcavities reside between solid bridges of the first substrate, the hydrogen ions are introduced below the hydrogen diffusion temperature of the first substrate, and the total amount of hydrogen is below that necessary to fracture the solid bridges between the thin film layer and the first substrate during energizing of the first substrate;

bonding a second substrate to the face surface of the first substrate; and

applying mechanical forces to fracture the solid bridges.

6. The method for producing a thin film according to claim 5, further comprising applying energy to the first substrate.

7. The method for producing a thin film according to claim 6, wherein applying energy comprises applying thermal energy.

8. The method for producing a thin film according to claim 6, wherein applying energy comprises applying energy after introducing hydrogen ions.

13. The method for producing a thin film according to claim 5, wherein providing a first substrate comprises providing a substrate including silicon and wherein the hydrogen diffusion temperature is about 350°

C.

14. The method for producing a thin film according to claim 13, wherein introducing hydrogen ions into the first substrate comprises hydrogen ion implantation with a dose less than about 4E16 ions per square centimeter.

15. The method for producing a thin film according to claim 14, wherein introducing hydrogen ions into the first substrate comprises hydrogen ion implantation with a dose greater than about 1E16 ions per square centimeter.

16. The method for producing a thin film according to claim 5 further comprising thermally treating the first substrate at a temperature greater than about 350°

C. after introducing hydrogen ions.