Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance
First Claim
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1. A method of manufacturing a semiconductor device contact, comprising:
- forming an insulating layer over a substrate;
forming an agglutinating layer over the insulating layer;
exposing the agglutinating layer to a plasma treatment employing a process chemistry comprising nitrogen and hydrogen;
forming a barrier layer over the plasma-treated agglutinating layer; and
forming a conductive layer over the barrier layer.
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Abstract
A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
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Citations
25 Claims
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1. A method of manufacturing a semiconductor device contact, comprising:
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forming an insulating layer over a substrate; forming an agglutinating layer over the insulating layer; exposing the agglutinating layer to a plasma treatment employing a process chemistry comprising nitrogen and hydrogen; forming a barrier layer over the plasma-treated agglutinating layer; and forming a conductive layer over the barrier layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of manufacturing a semiconductor device, comprising:
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providing a substrate having logic devices formed therein; forming an insulating layer over the substrate and logic devices; forming a plurality of recesses in the insulating layer each exposing a portion of one of the logic devices forming an agglutinating layer over the insulating layer and at least partially within the plurality of recesses; exposing the agglutinating layer to a plasma treatment; forming a barrier layer over the plasma-treated agglutinating layer and at least partially within the plurality of recesses; and forming a bulk conductive layer over the barrier layer to fill the plurality of recesses. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method of manufacturing a semiconductor device, comprising:
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forming an insulating layer over a substrate; forming an agglutinating layer over the insulating layer; exposing the agglutinating layer to a plasma treatment immediately after the agglutinating layer is formed; forming a barrier layer over the plasma-treated agglutinating layer; and forming a conductive layer over the barrier layer. - View Dependent Claims (23, 24, 25)
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22. The method recited in claim 22 wherein the agglutinating layer comprises TiN and is formed by IMP deposition.
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