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Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same

  • US 7,067,856 B2
  • Filed: 02/02/2004
  • Issued: 06/27/2006
  • Est. Priority Date: 02/10/2000
  • Status: Expired due to Term
First Claim
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1. A semiconductor structure comprising:

  • a monocrystalline silicon substrate;

    an amorphous oxide material in contact with the monocrystalline silicon substrate;

    a monocrvstalline metal oxide selected from the group consisting of alkaline earth metal titanates, alkaline earth metal zirconates, alkaline earth metal hafnates, alkaline earth metal tantalates, alkaline earth metal ruthenates, alkaline earth metal niobates, alkaline earth metal vanadates, alkaline earth metal tin-based perovskites, lanthanum aluminate, lanthanum scandium oxide, gadolinium oxide and mixtures thereof contacting the amorphous oxide material; and

    a monocrystalline compound semiconductor material overlying the monocrystalline metal oxide.

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