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Method for manufacturing semiconductor integrated circuit device

  • US 7,067,889 B2
  • Filed: 01/31/2003
  • Issued: 06/27/2006
  • Est. Priority Date: 11/15/2001
  • Status: Expired due to Term
First Claim
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1. A semiconductor integrated circuit device comprising:

  • a first MISFET on a first region of a main surface of a semiconductor substrate; and

    a second MISFET on a second region of the main surface of the semiconductor substrate, wherein the first MISFET has a first sidewall spacer formed over the sidewall of a first gate electrode, of the first MISFET, wherein the first MISFET has a silicon nitride film formed between the first sidewall spacer and the first gate electrode, wherein a gate insulation film of the first MISFET comprises a first insulation film having a relative dielectric constant higher than that of silicon nitride, wherein a gate insulation film of the second MISFET comprises a second insulation film including silicon oxide, and wherein a film thickness, converted to that of a silicon oxide film, of the first insulation film is thinner than a film thickness, converted to that of a silicon oxide film, of the second insulation film.

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