Heat spreader and semiconductor device and package using the same

• US 7,067,903 B2
• Filed: 11/06/2003
• Issued: 06/27/2006
• Est. Priority Date: 11/07/2002
• Status: Expired due to Fees

• Current Assignee: Klaus Schmidt
• Original Assignee: Klaus Schmidt
• Inventors: Yokota, Yoshihiro, Inoue, Kenichi, Hayashi, Kazushi, Kawakami, Nobuyuki, Kobori, Takashi, Tachibana, Takeshi, Kobashi, Koji
• Primary Examiner(s): Pham, Long
• Assistant Examiner(s): Rao, Shrinivas H
• Application Number:
  US10/701,499
• Publication Number:
  US 20040238946A1
• Time in Patent Office: 964 Days
• Field of Search: 257/625, 257/675, 257/705, 257/706, 257/707, 257/709
• US Class Current: 257/625
• CPC Class Codes: H01L 23/3732 Diamonds
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED

Abstract

A semiconductor device and package has a heat spreader directly disposed on the reverse surface of the semiconductor device. This heat spreader includes a diamond layer or a layer containing diamond and ceramics such as silicon carbide and aluminum nitride. The heat spreader is directly formed on a substrate for the semiconductor device. In particular, the heat spreader is composed of a diamond layer and one or two metal or ceramic members, which are bonded to the diamond layer with one or two polymer adhesive layers. This diamond layer has a fiber structure across the thickness or a microcrystalline structure. Cilia are formed on a surface of the diamond layer facing the one or two metal or ceramic members.

Claims

1. A semiconductor device having a heat spreader comprising a diamond-containing material having a thermal conductivity t, where 350≦

t<

1000 W/(m·

K), the heat spreader being directly disposed entirely or partially on the reverse surface of the semiconductor device, wherein the diamond-containing material is a composite of a diamond layer and a ceramic layer or a mixture of diamond particles and ceramic particles, the ceramic layer or the ceramic particles comprising at least one of silicon carbide and aluminum nitride.

2. The semiconductor device according to claim 1, wherein the heat spreader is directly disposed on a substrate for the semiconductor device.

3. The semiconductor device according to claim 1, wherein the heat spreader has an irregular surface facing away from the semiconductor device.

4. A semiconductor package accommodating the semiconductor device having a heat spreader comprising a diamond-containing material having a thermal conductivity t, where 350≦

t<

1000 W/(m·

K), the heat spreader being directly disposed entirely or partially on the reverse surface of the semiconductor device, wherein a metal heat sink or a metal radiating fin is bonded on a surface of the heat spreader facing away from the semiconductor device, and the diamond-containing material is a composite of a diamond layer and a ceramic layer or a mixture of diamond particles and ceramic particles, the ceramic layer or the ceramic particles comprising at least one of silicon carbide and aluminum nitride.

5. The semiconductor package according to claim 4, wherein a polymer adhesive layer is used to bond the metal heat sink or the metal radiating fin on the surface of the heat spreader, and cilia are formed on the surface of the heat spreader so that the polymer adhesive layer spreads over part of the cilia.