High Q factor integrated circuit inductor
First Claim
1. A semiconductor structure, comprising:
- an inductor having a top surface, a bottom surface and sidewalls, a lower portion of said inductor extending into but not completely through a single dielectric layer on a semiconductor substrate and an upper portion of said inductor extending above said dielectric layer, said lower portion of said inductor comprising a conductive liner and a core conductor and said upper portion of said inductor consisting only of said core conductor; and
means to electrically contact said inductor.
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Accused Products
Abstract
An inductor and a method of forming and the inductor, the method including: (a) providing a semiconductor substrate; (b) forming a dielectric layer on a top surface of the substrate; (c) forming a lower trench in the dielectric layer; (d) forming a resist layer on a top surface of the dielectric layer; (e) forming an upper trench in the resist layer, the upper trench aligned to the lower trench, a bottom of the upper trench open to the lower trench; and (f) completely filling the lower trench at least partially filling the upper trench with a conductor in order to form the inductor. The inductor including a top surface, a bottom surface and sidewalls, a lower portion of said inductor extending a fixed distance into a dielectric layer formed on a semiconductor substrate and an upper portion extending above said dielectric layer; and means to electrically contact said inductor.
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Citations
30 Claims
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1. A semiconductor structure, comprising:
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an inductor having a top surface, a bottom surface and sidewalls, a lower portion of said inductor extending into but not completely through a single dielectric layer on a semiconductor substrate and an upper portion of said inductor extending above said dielectric layer, said lower portion of said inductor comprising a conductive liner and a core conductor and said upper portion of said inductor consisting only of said core conductor; and means to electrically contact said inductor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A structure, comprising:
and inductor having a top surface, a bottom surface and sidewalls, a lower portion of said inductor extending into but not completely through a single dielectric layer on a semiconductor substrate and an upper portion of said inductor extending above said dielectric layer, said lower portion of said inductor comprising a conductive liner and a core conductor and said upper portion of said inductor consists only of said core conductor, said core conductor comprising Cu and said liner comprising a dual layer of TaN and Ta.
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20. A structure comprising:
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an inductor having a top surface, a bottom surface and sidewalls, a lower portion of said inductor extending into but not completely through a single dielectric layer on a semiconductor substrate and an upper portion of said inductor extending above said dielectric layer, said lower portion of said inductor comprising a conductive liner and a core conductor and said upper portion of said inductor consisting only of said core conductor; and a conductive passivation layer on a top surface and sidewalls of said upper portion of said inductor, said passivation comprising layer a layer of Ni or a layer of Au over a layer of Ni.
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21. A structure, comprising:
an inductor having a top surface, a bottom surface and sidewalls, a lower portion of said inductor extending into but not completely through a single dielectric layer on a semiconductor substrate and an upper portion of said inductor extending above said dielectric layer, said lower portion extending a distance of less than 3 microns into said dielectric layer.
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22. A structure, comprising:
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an inductor having a top surface, a bottom surface and sidewalls, a lower portion of said inductor extending into but not completely through a single dielectric layer on a semiconductor substrate and upper portion of said inductor extending above said dielectric layer; and integral vias extending from said bottom surface of said inductor through said dielectric layer and electrically contacting pass through metallurgy in said substrate. - View Dependent Claims (23)
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24. A structure, comprising:
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an inductor having a top surface, a bottom surface and sidewalls, a lower portion of said inductor extending into but not completely through a single dielectric layer on a semiconductor substrate and an upper portion of said inductor extending above said dielectric layer; means to electrically contact said inductor; and a contact pad comprising a via formed in said dielectric layer, said via exposing at least a portion of an I/O terminal pad in said substrate, sidewalls of said via and at least a portion of said I/O terminal pad covered with a passivation layer over a conformal seed layer over a conductive liner. - View Dependent Claims (25, 26, 27, 28, 29, 30)
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Specification