Inductor formed in an integrated circuit

• US 7,068,139 B2
• Filed: 09/29/2004
• Issued: 06/27/2006
• Est. Priority Date: 09/30/2003
• Status: Active Grant

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: Agere Systems Incorporated (Broadcom, Inc.)
• Inventors: Harris, Edward Belden, Vitkavage, Susan Clay, Steiner, Kurt George, Merchant, Sailesh Mansinh
• Primary Examiner(s): Nguyen, Tuyen T.
• Application Number:
  US10/953,475
• Publication Number:
  US 20050099259A1
• Time in Patent Office: 636 Days
• Field of Search: 336/200, 336206-208, 336/232, 257/531
• US Class Current: 336/200
• CPC Class Codes: H01F 41/041 Printed circuit coils apparatus or processes for manufacturing printed circuits in general H05K3/00
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05027 the internal layer extending out of an opening
• CPC Class Codes: H01L 2224/0508 being stacked
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 2224/056 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48 of an individual wire connector
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/10 Bump connectors bumps on insulating substrates, e.g. chip carriers, H01L23/49816; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/13 of an individual bump connector
• CPC Class Codes: H01L 27/08 including only semiconductor components of a single kind
• CPC Class Codes: H01L 28/10 : Inductors
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: Y10T 29/4902 : Electromagnet, transformer or inductor

Abstract

An inductor formed within an integrated circuit and a method for forming the inductor. The inductor comprises an underlying layer of aluminum formed in a first metallization layer and patterned and etched into the desired shape. In one embodiment the aluminum line comprises a spiral shape. According to a damascene process, a conductive runner, preferably of copper, is formed in a dielectric layer overlying the aluminum line and in electrical contact therewith. The aluminum line and the conductive runner cooperate to form the inductor. In another embodiment the aluminum line and the conductive runner are formed in a vertically spaced-apart orientation, with tungsten plugs or conductive vias formed to provide electrical connection therebetween. A method for forming the inductor comprises forming an aluminum conductive line and forming a conductive runner over the conductive line.

Claims

1. An integrated circuit comprising an inductor formed therein, the integrated circuit comprising:

a substrate;

a plurality of material layers overlying the substrate;

a spiral shaped continuous conductive line disposed in a first metallization layer; and

a spiral shaped continuous conductive runner disposed in a second metallization layer above the first metallization layer and in substantially vertical alignment and physical contact with the conductive line for substantially an entire length of the conductive runner and the conductive line, wherein the conductive line and the conductive runner cooperate to produce an inductive effect.

2. The integrated circuit of claim 1 wherein a material of the conductive line comprises aluminum.

3. The integrated circuit of claim 1 wherein a material of the conductive runner comprises copper.

4. The integrated circuit of claim 1 wherein the first metallization layer comprises an (n−

1)^th metallization layer and the second metallization layer comprises an nth metallization layer of the integrated circuit.

5. The integrated circuit of claim 1 further comprising a dielectric layer overlying the first metallization layer, wherein the conductive runner is formed in the dielectric layer.

6. The integrated circuit of claim 5 wherein the dielectric layer defines at least one opening therein, the opening extending to a terminal end region of the conductive line, the integrated circuit further comprising a conductive structure disposed within the opening and in electrical contact with the terminal end region.

7. The integrated circuit of claim 6 wherein the conductive structure comprises a solder bump.

8. The integrated circuit of claim 6 wherein the conductive structure comprises a bond pad.

9. The integrated circuit of claim 1 wherein the inductor has an inductance value responsive to a shape, a length and a width of the conductive line and the conductive runner.

10. The integrated circuit of claim 1 wherein the substrate has an upper surface, and wherein the conductive line and the conductive runner are disposed in a plane parallel to the upper surface.

11. The integrated circuit of claim 1 wherein a material of the conductive runner has a higher conductivity than a material of the conductive line.

12. An integrated circuit comprising:

a semiconductor substrate comprising active regions therein;

a plurality of dielectric layers overlying the substrate;

a plurality of metallization layers alternating with the plurality of dielectric layers wherein a first one of the plurality of metallization layers comprises a spiral shaped continuous conductive line; and

a spiral shaped continuous conductive runner formed in a second one of the plurality of metallization layers, wherein the conductive runner is in conductive communication with the conductive line, and wherein the conductive runner and the conductive line cooperate to produce an inductive effect.

13. The integrated circuit of claim 12 wherein the conductive runner is disposed in physical contact with the conductive line to provide the conductive communication therebetween.

14. The integrated circuit of claim 13 further comprising a first and a second conductive pad disposed in the first one of the plurality of metallization layers and forming a terminal end of the conductive line.

15. The integrated circuit of claim 14 further comprising a first and a second inductor terminal in conductive communication with, respectively, the first and the second conductive pads.

16. The integrated circuit of claim 12 wherein a plurality of conductive plugs disposed between the conductive line and the conductive runner provide the conductive communication between the conductive line and the conductive runner.

17. The integrated circuit of claim 12 further comprising a first and a second conductive pad disposed in the second one of the plurality of metallization layers, each connected to a terminal end of the conductive runner through a conductive plug.

18. The integrated circuit of claim 17 further comprising a first and a second inductor terminal in conductive communication with, respectively, the first and the second conductive pads.