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Method for forming a thin, high quality buffer layer in a field effect transistor and related structure

  • US 7,071,051 B1
  • Filed: 01/20/2004
  • Issued: 07/04/2006
  • Est. Priority Date: 01/20/2004
  • Status: Active Grant
First Claim
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1. A method of forming a field-effect transistor on a substrate, said method comprising steps of:

  • utilizing a silicon tetrachloride precursor in an atomic layer deposition process to form a buffer layer on said substrate;

    forming a high-k dielectric layer over said buffer layer, said high-k dielectric layer being selected from the group consisting of hafnium oxide, zirconium oxide, and aluminum oxide.

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