Method of forming a dual-sided capacitor
First Claim
Patent Images
1. A method of forming a capacitor comprising:
- forming a hemispherical grained polysilicon layer over a substrate;
subjecting said hemispherical grained polysilicon layer to a cleaning solution to remove impurities from said hemispherical grained polysilicon layer and to obtain a cleaned hemispherical grained polysilicon layer;
forming a native oxide layer over said cleaned hemispherical grained polysilicon layer, said native oxide layer being formed to a thickness of about 5 Angstroms to about 50 Angstroms;
forming an amorphous silicon layer over said native oxide layer;
subjecting said amorphous silicon layer to a seeding treatment;
forming a dielectric layer over at least a portion of an outer side of said cleaned hemispherical grained polysilicon layer and said amorphous silicon layer; and
forming a conductive layer over said dielectric layer.
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Abstract
A dual-sided HSG capacitor and a method of fabrication are disclosed. A thin native oxide layer is formed between a doped polycrystalline layer and a layer of hemispherical grained polysilicon (HSG) as part of a dual-sided lower capacitor electrode. Prior to the dielectric formation, the lower capacitor electrode may be optionally annealed to improve capacitance.
10 Citations
33 Claims
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1. A method of forming a capacitor comprising:
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forming a hemispherical grained polysilicon layer over a substrate;
subjecting said hemispherical grained polysilicon layer to a cleaning solution to remove impurities from said hemispherical grained polysilicon layer and to obtain a cleaned hemispherical grained polysilicon layer;
forming a native oxide layer over said cleaned hemispherical grained polysilicon layer, said native oxide layer being formed to a thickness of about 5 Angstroms to about 50 Angstroms;
forming an amorphous silicon layer over said native oxide layer;
subjecting said amorphous silicon layer to a seeding treatment;
forming a dielectric layer over at least a portion of an outer side of said cleaned hemispherical grained polysilicon layer and said amorphous silicon layer; and
forming a conductive layer over said dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming a capacitor comprising:
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forming a hemispherical grained polysilicon layer over a substrate;
forming a native oxide layer over said hemispherical grained polysilicon layer by an in-situ atomic layer deposition employing a silicon source precursor and an oxygen source;
forming an amorphous silicon layer over said native oxide layer;
forming a dielectric layer over at least a portion of an outer side of said hemispherical grained polysilicon layer and said amorphous silicon layer; and
forming a conductive layer over said dielectric layer. - View Dependent Claims (11, 12, 13, 14)
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15. A method of forming a capacitor comprising:
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forming a hemispherical grained polysilicon layer over a substrate;
forming a native oxide layer over said hemispherical grained polysilicon layer by an ex-situ atomic layer deposition employing a silicon source precursor and an oxygen source;
forming an amorphous silicon layer over said native oxide layer;
forming a dielectric layer over at least a portion of an outer side of said hemispherical grained polysilicon layer and said amorphous silicon layer; and
forming a conductive layer over said dielectric layer. - View Dependent Claims (16, 17, 18, 19)
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20. A method of forming a capacitor comprising:
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forming a hemispherical grained polysilicon layer over a substrate;
forming a native oxide layer over said hemispherical grained polysilicon layer by thermal growth at a temperature of less than about 900°
C. for about 1 second to about 10 minutes;
forming an amorphous silicon layer over said native oxide layer;
forming a dielectric layer over at least a portion of an outer side of said hemispherical grained polysilicon layer and said amorphous silicon layer; and
forming a conductive layer over said dielectric layer. - View Dependent Claims (21, 22, 23, 24)
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25. A method of reducing the diffusivity of silicon atoms of a lower capacitor electrode, comprising:
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providing a doped polysilicon layer in an opening formed within a semiconductor substrate, said doped polysilicon layer comprising hemispherical grained polysilicon grains having a first thickness;
providing a native oxide layer over said doped polysilicon layer; and
providing a layer of hemispherical grained polysilicon over said native oxide layer, said layer of hemispherical grained polysilicon comprising grains of a second thickness, wherein said second thickness is greater than said first thickness. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33)
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Specification