Semiconductor device and driving circuit for semiconductor device

• US 7,071,516 B2
• Filed: 06/15/2004
• Issued: 07/04/2006
• Est. Priority Date: 10/02/2003
• Status: Active Grant

• Current Assignee: Arigna Technology Limited (Atlantic IP Services Limited)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Terashima, Tomohide
• Primary Examiner(s): Soward, Ida M.
• Application Number:
  US10/866,677
• Publication Number:
  US 20050072990A1
• Time in Patent Office: 749 Days
• Field of Search: 257/370, 257/378, 257/526, 257/539, 257/552, 257566-565, 257/572
• US Class Current: 257/378
• CPC Class Codes: H01L 27/0623 in combination with bipolar transistors
• CPC Class Codes: H01L 29/7395 Vertical transistors, e.g. vertical IGBT
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H03K 17/0406 in composite switches

Abstract

A PMOS transistor (Q2) provided for developing a short circuit between the base and emitter of an N-type IGBT during turn-OFF includes a P diffusion region (5), a P diffusion region (6), and a conductive film (10) and a second gate electrode (15) provided via a gate oxide film (21) on a surface of an N⁻ epitaxial layer (2) between the P diffusion regions (5 and 6). The gate oxide film (21) is formed in a thickness having a gate breakdown voltage higher than the element breakdown voltage of a typical field oxide film and the like.

Claims

1. A semiconductor device comprising:

an insulated gate bipolar transistor (IGBT) of a first conductivity type including a first insulated gate transistor of said first conductivity type and a bipolar transistor of a second conductivity type connected between first and second main electrodes; and

a second insulated gate transistor of said second conductivity type configured to short-circuit a base and emitter of said bipolar transistor during an ON state of said second insulated gate transistor, wherein

a thickness of a gate insulating film of said second insulated gate transistor is so set as to satisfy a prescribed breakdown voltage higher than an element breakdown voltage of said IGBT.

2. The semiconductor device according to claim 1, wherein

said bipolar transistor includes a base layer of said first conductivity type, and first and second electrode diffusion regions of said second conductivity type formed selectively in an upper part of said base layer, and

an auxiliary diffusion region of said second conductivity type is provided between said first and second electrode diffusion regions in the upper part of said base layer.

3. The semiconductor device according to claim 1, wherein

said bipolar transistor includes a base layer of said first conductivity type, and first and second electrode diffusion regions of said second conductivity type formed selectively in an upper part of said base layer, said second insulated gate transistor includes said base layer, said second electrode diffusion region, a third electrode diffusion region of said second conductivity type formed selectively in the upper part of said base layer, and a gate electrode formed via said gate insulating film on said base layer between said second and third electrode diffusion regions, and

an auxiliary diffusion region of said first conductivity type having a higher impurity concentration of said first conductivity type than said base layer is provided to cover said third electrode diffusion region in the upper part of said base layer.

4. The semiconductor device according to claim 1, wherein

said bipolar transistor includes a first base layer of said first conductivity type, and first and second electrode diffusion regions of said second conductivity type formed selectively in an upper part of said first base layer,

said second insulated gate transistor includes a second base layer of said first conductivity type, third and fourth electrode diffusion regions of said second conductivity type formed selectively in the upper part of said second base layer, and a gate electrode formed via said gate insulating film on said second base layer between said third and fourth electrode diffusion regions, and

said first and second base layers are provided independently of each other.

5. The semiconductor device according to claim 1, wherein

said bipolar transistor includes a base layer of said first conductivity type, and first and second electrode diffusion regions of said second conductivity type formed selectively in an upper part of said base layer,

said first insulated gate transistor includes said base layer, a third electrode diffusion region of said first conductivity type formed selectively in the upper part of said first electrode diffusion region, and a first gate electrode formed via another gate insulating film different from said gate insulating film on said first electrode diffusion region between said base layer and said third electrode diffusion region, and

said second insulated gate transistor includes said base layer, said second electrode diffusion region, a fourth electrode diffusion region of said second conductivity type formed selectively in the upper part of said base layer, and a second gate electrode formed via said gate insulating film on said base layer between said second and fourth electrode diffusion regions,

said semiconductor device further comprising:

a first auxiliary diffusion region of said first conductivity type having a higher impurity concentration of said first conductivity type than said base layer, formed adjacently to said fourth electrode diffusion region in the upper part of said base layer; and

a second auxiliary diffusion region of said first conductivity type having a higher impurity concentration of said first conductivity type than said base layer between said first and second electrode diffusion regions in the upper part of said base layer, wherein

said first and second auxiliary diffusion regions have an electrical connection relationship to each other.

6. The semiconductor device according to claim 5, further comprising:

a metal wiring electrically connecting said first and second auxiliary diffusion regions.

7. The semiconductor device according to claim 5, wherein

said first and second auxiliary diffusion regions include an integrally formed common auxiliary diffusion region in an upper part of said base layer which extends from a region between said first and second electrode diffusion regions to a region adjacent to said fourth electrode diffusion region in plan view.

8. A driving circuit for a semiconductor device, wherein said semiconductor device comprises:

an insulated gate bipolar transistor (IGBT) of a first conductivity type including a first insulated gate transistor of said first conductivity type and a bipolar transistor of a second conductivity type connected between first and second main electrodes; and

a second insulated gate transistor of said second conductivity type configured to short-circuit a base and emitter of said bipolar transistor during an ON state of said second insulated gate transistor, wherein

a thickness of a gate insulating film of said second insulated gate transistor is so set as to satisfy a prescribed breakdown voltage higher than an element breakdown voltage of said IGBT, and said driving circuit comprises;

first control signal supply means supplying a first control signal to a gate electrode of said first insulated gate transistor; and

second control signal supply means supplying a second control signal obtained in response to said first control signal to the gate electrode of said second insulated gate transistor, wherein

said second control signal supply means generates, as said second control signal, a first voltage for turning said second insulated gate transistor off when said first control signal provides instructions to turn said first insulated gate transistor on, and generates a second voltage for turning said second insulated gate transistor on when said first control signal provides instructions to turn said first insulated gate transistor off.

9. A driving circuit for a semiconductor device, wherein said semiconductor device comprises:

an insulated gate bipolar transistor (IGBT) of a first conductivity type including a first insulated gate transistor of said first conductivity type and a bipolar transistor of a second conductivity type connected between first and second main electrodes; and

a second insulated gate transistor of said second conductivity type configured to short-circuit a base and emitter of said bipolar transistor during a ON state of said second insulated gate transistor, wherein

a thickness of a gate insulating film of said second insulated gate transistor is so set as to satisfy a prescribed breakdown voltage higher than an element breakdown voltage of said IGBT, and said driving circuit comprises;

a coil having one end applied with a constant voltage and the other end connected to the emitter electrode of said bipolar transistor;

control signal supply means supplying a first control signal to a gate electrode of said first insulated gate transistor; and

fixed voltage supply means supplying a fixed potential obtained by shifting said constant voltage in the direction of turning said second insulated gate transistor on, to the gate electrode of said second insulated gate transistor.

10. A driving circuit for a semiconductor device, wherein said semiconductor device comprises:

an insulated gate bipolar transistor (IGBT) of a first conductivity type including a first insulated gate transistor of said first conductivity type and a bipolar transistor of a second conductivity type connected between first and second main electrodes; and

a second insulated gate transistor of said second conductivity type configured to short-circuit a base and emitter of said bipolar transistor during a ON state of said second insulated gate transistor, wherein

a thickness of a gate insulating film of said second insulated gate transistor is so set as to satisfy a prescribed breakdown voltage higher than an element breakdown voltage of said IGBT, and said driving circuit comprises;

a coil having one end applied with a constant voltage and the other end connected to the emitter electrode of said bipolar transistor; and

a control signal supply means supplying the same control signal to a gate electrodes of both said first and second insulated gate transistors.