Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus
First Claim
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1. A magnetoresistance effect element comprising:
- a magnetoresistance effect film including a magnetically pinned layer having a magnetic material film whose direction of magnetization is pinned substantially in one direction, a magnetically free layer having a magnetic material film whose direction of magnetization changes in response to an external magnetic field, a nonmagnetic metal intermediate layer located between said pinned layer and said free layer, and an anti-ferromagnetic layer configured to pin said magnetization of said magnetically pinned layer; and
a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film,at least one of said pinned layer and said free layer including a thin-film insertion layer, andsaid thin-film insertion layer being made of a binary or ternary alloy of iron (Fe), cobalt (Co) and nickel (Ni) containing a quantity of iron (Fe) not less than 50 atomic % in case of said binary alloy or 25% atomic % in case of said ternary alloy, and additionally containing a quantity of at least one kind of element selected from the group consisting of copper (Cu), silver (Ag), and gold (Au) not less than 0.1 atomic % and not exceeding 30 atomic %.
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Abstract
In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.
33 Citations
7 Claims
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1. A magnetoresistance effect element comprising:
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a magnetoresistance effect film including a magnetically pinned layer having a magnetic material film whose direction of magnetization is pinned substantially in one direction, a magnetically free layer having a magnetic material film whose direction of magnetization changes in response to an external magnetic field, a nonmagnetic metal intermediate layer located between said pinned layer and said free layer, and an anti-ferromagnetic layer configured to pin said magnetization of said magnetically pinned layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film, at least one of said pinned layer and said free layer including a thin-film insertion layer, and said thin-film insertion layer being made of a binary or ternary alloy of iron (Fe), cobalt (Co) and nickel (Ni) containing a quantity of iron (Fe) not less than 50 atomic % in case of said binary alloy or 25% atomic % in case of said ternary alloy, and additionally containing a quantity of at least one kind of element selected from the group consisting of copper (Cu), silver (Ag), and gold (Au) not less than 0.1 atomic % and not exceeding 30 atomic %. - View Dependent Claims (2, 7)
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3. A magnetic head comprising:
a magnetoresistance effect element comprising; a magnetoresistance effect film including a magnetically pinned layer having a magnetic material film whose direction of magnetization is pinned substantially in one direction, a magnetically free layer having a magnetic material film whose direction of magnetization changes in response to an external magnetic field, a nonmagnetic metal intermediate layer located between said pinned layer and said free layer, and an anti-ferromagnetic layer configured to pin said magnetization of said magnetically pinned layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film, at least one of said pinned layer and said free layer including a thin-film insertion layer, and said thin-film insertion layer being made of a binary or ternary alloy of iron (Fe), cobalt (Co) and nickel (Ni) containing a quantity of iron (Fe) not less than 50 atomic % in case of said binary alloy or 25% atomic % in case of said ternary alloy, and additionally containing a quantity of at least one kind of element selected from the group consisting of copper (Cu), silver (Ag), and gold (Au) not less than 0.1 atomic % and not exceeding 30 atomic %. - View Dependent Claims (4)
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5. A magnetic reproducing apparatus which reads information magnetically recorded in a magnetic recording medium, comprising:
a magnetic head having a magnetoresistance effect element comprising; a magnetoresistance effect film including a magnetically pinned layer having a magnetic material film whose direction of magnetization is pinned substantially in one direction, a magnetically, free layer having a magnetic material film whose direction of magnetization changes in response to an external magnetic field, a nonmagnetic metal intermediate layer located between said pinned layer and said free layer, and an anti-ferromagnetic layer configured to pin said magnetization of said magnetically pinned layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film, at least one of said pinned layer and said free layer including a thin-film insertion layer, and said thin-film insertion layer being made of a binary or ternary alloy of iron (Fe), cobalt (Co) and nickel (Ni) containing a quantity of iron (Fe) not less than 50 atomic % in case of said binary alloy or 25% atomic % in case of said ternary alloy, and additionally containing a quantity of at least one kind of element selected from the group consisting of copper (Cu), silver (Ag), and gold (Au) not less than 0.1 atomic % and not exceeding 30 atomic %. - View Dependent Claims (6)
Specification