Temperature-compensated power sensing circuit for power amplifiers

• US 7,071,783 B2
• Filed: 09/10/2004
• Issued: 07/04/2006
• Est. Priority Date: 07/19/2002
• Status: Active Grant

• Current Assignee: Micro Mobio Corporation
• Original Assignee: Micro Mobio Corporation
• Inventors: Wang, Weiping, Ichitsubo, Ikuroh
• Primary Examiner(s): Nguyen, Khanh Van
• Application Number:
  US10/938,779
• Publication Number:
  US 20050030101A1
• Time in Patent Office: 662 Days
• Field of Search: 330/285, 330/288, 330/296, 330/302, 330/289
• US Class Current: 330/285
• CPC Class Codes: H03G 3/3042 in modulators, frequency-changers, transmitters or power amplifiers transmission power control in bidirectional transmission systems H04W52/04

Abstract

An amplifier circuit for amplifying radio frequency signals having temperature compensation and bias compensation includes a radio frequency power amplifier that receives an input radio frequency signal and outputs an amplified radio frequency signal, and a first transistor performing as a detector diode with its collector and base connected. The base of the first transistor receives the amplified radio frequency signal from the power amplifier, a second DC bias input signal from a regulated DC source, and a third power-sensing signal. The amplifier circuit further includes a second transistor to amplify the DC component of the RF signal from the base of the first transistor. The base of the second transistor is coupled to the base of the first transistor. The collector of the second transistor outputs the power-sensing signal, which is coupled to the regulated DC source through a resistor.

Claims

1. A power sensing circuit for sensing radio frequency (RF) signals, comprising:

a first transistor to perform as a detector diode, including

i) a first base to receive a radio frequency input signal a DC bias signal from a regulated DC source coupled through a resistor, and a power-sensing signal; and

ii) a first collector connected to the first base;

b) a second transistor to amplify the DC component of the RF signal from the first base, including

i) a second base connected to the first base through a low-pass filter; and

ii) a second collector to output the power-sensing signal to be coupled to the regulated DC source through a resistor, said power-sensing signal being substantially proportional to the strength of the radio frequency input signal; and

c) an output port coupled to the second collector through a low-pass filter, to output the power-sensing signal and a capacitor coupled to the first collector and the second base.

2. The circuit of claim 1 comprising a radio frequency power amplifier connected to an impedance-matching circuit which in turn is coupled to the first base of the first transistor.

3. The circuit of claim 1 comprising two equal sized transistors.

4. The circuit of claim 1 comprising a radio frequency power amplifier fabricated with a Heterojunction Bipolar Transistor (HBT).

5. The circuit of claim 1 wherein the input radio frequency signal is modulated at a frequency in the range of 1MHz to 10 GHz.

6. A power sensing circuit for sensing radio frequency (RF) signals, comprising:

a) a first transistor to perform as a detector diode, including

a first base to receive a radio frequency input signal a DC bias signal from a regulated DC source coupled through a resistor, and a power-sensing signal; and

ii) a first collector connected to the first base;

b) a second transistor to amplify the DC component of the RF signal from the first base, including;

a second base connected to the first base through a low-pass filter; and

ii) a second collector to output the power-sensing signal to be coupled to the regulated DC source through a resistor, said power-sensing signal being substantially proportional to the strength of the radio frequency input signal; and

c) an output port coupled to the second collector through a low-pass filter, to output the power-sensing signal, and a diode coupled between the regulated DC source and the second collector.

8. The circuit of claim 6, wherein the power sensing signal comprises an average power.

9. The circuit of claim 8, wherein the power sensing signal is compared to a peak envelope of an RF signal to determine a PAR (peak to average ratio).

10. The circuit of claim 9, wherein a power amplifier is biased for high output when the PAR is high, the power amplifier is biased for higher efficiency when PAR is low.

7. The circuit of claimed 6, further comprising a capacitor coupled to the first collector and the second base.