IC substrate of glass and display device

• US 7,072,018 B2
• Filed: 05/29/2002
• Issued: 07/04/2006
• Est. Priority Date: 06/08/2001
• Status: Expired due to Fees

• Current Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Inventors: Yokoyama, Ryoichi, Miyajima, Yasushi, Hirosawa, Koji, Yamamura, Kuni
• Primary Examiner(s): CHOWDHURY, TARIFUR RASHID
• Application Number:
  US10/156,972
• Publication Number:
  US 20020186341A1
• Time in Patent Office: 1,497 Days
• Field of Search: 349149-152, 349/158, 257/59, 257/72
• US Class Current: 349/151
• CPC Class Codes: G02F 1/13452 Conductors connecting driver circuitry and terminals of panels
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 2203/01 transmissive

Abstract

Disclosed is an IC chip using a glass substrate capable of being manufactured at a lower cost than the IC chip using from a semiconductor wafer. Further, where the body substrate of a display device is made of glass, the IC chip and the body substrate can have equal coefficients of thermal expansion, thus preventing the IC chips from peeling off and reducing the failure rate. Furthermore, the gate line driving IC applied to a display device can be arranged as an IC chip having a length approximately equal to the display area, therefore, mounting a plurality of IC chips as the gate driving IC is not required, thereby reducing the production cost. Still further, all gate lines can be extended in parallel from the IC chip so that no difference in the delay occurs among the gate lines and the size of frame of display device can reduced.

Claims

1. A display device comprising:

a body substrate made of glass;

a display area with a plurality of pixel electrodes provided on the body substrate;

a plurality of switching elements provided on the body substrate and connected to the pixel electrodes;

gate lines formed on the body substrate and connected to gates of the switching elements;

signal lines formed on the body substrate and connected to the pixel electrodes through the switching elements;

a gate line driving IC chip connected to the gate lines; and

a signal line driving IC chip connected to the signal lines;

wherein an electron mobility of an element constituting the signal line driving IC chip is higher than an electron mobility of an element constituting the gate line driving IC chip for at least one of the gate lines.

2. The display device as claimed in claim 1 wherein a plurality of elements formed on the signal line driving IC chip include an active layer of polycrystalline silicon.

3. The display device as claimed in claim 2 wherein:

the gate line driving IC chip is arranged along one side of the display area;

the gate lines are extended substantially in parallel from the gate line driving integrated circuit chip to the display area;

the plurality of signal line driving IC chips are arranged to extend parallel to the one side where the gate line driving IC chip is arranged; and

wherein the signal lines are formed so as to spread from the signal line driving IC chips to the display area.

4. The display device as claimed in claim 2 wherein the plurality of elements formed on the body substrate include an active layer of polycrystalline silicon.

5. The display device as claimed in claim 1 wherein a plurality of elements formed on the gate line driving IC chip include an active layer of polycrystalline silicon.

6. The display device as claimed in claim 5 wherein the gate line IC chip is comprised of a plurality of elements on the body substrate and the gate line driving IC chip has a same thermal expansion as the body substrate.

7. The display device as claimed in claim 5 wherein a plurality of elements formed on the signal line driving IC chip include an active layer of polycrystalline silicon.

8. The display device as claimed in claim 7 wherein the plurality of elements formed on the body substrate include an active layer of polycrystalline silicon.

9. The display device as claimed in claim 7 wherein:

the gate line driving IC chip is arranged along one side of the display area;

the gate lines are extended substantially in parallel from the gate line driving integrated circuit chip to the display area;

the plurality of signal line driving IC chips are arranged to extend parallel to the one side where the gate line driving IC chip is arranged; and

wherein the signal lines are formed so as to spread from the signal line driving IC chips to the display area.

10. A display device comprising:

a body substrate made of glass;

a display area with a plurality of pixel electrodes provided on the body substrate;

a plurality of switching elements provided on the body substrate and connected to the pixel electrodes;

gate lines formed on the body substrate and connected to gates of the switching elements;

signal lines formed on the body substrate and connected to the pixel electrodes through the switching elements;

one gate line driving IC chip connected to the gate lines; and

a plurality of signal line driving IC chips connected to the signal lines;

wherein an electron mobility of an element constituting the signal line driving IC chips is higher than an electron mobility of an element constituting the gate line driving IC chip.