Method of decreasing the k value in sioc layer deposited by chemical vapor deposition
First Claim
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1. A method for processing a substrate, comprising:
- reacting an organosilicon compound with carbon dioxide and one or more oxidizing gases selected from the group consisting of oxygen, ozone, nitrous oxide, carbon monoxide, and water to deposit a dielectric layer comprising silicon, carbon, and oxygen on the substrate; and
depositing a layer comprising silicon and carbon on the dielectric layer.
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Abstract
A method for processing a substrate including depositing a dielectric layer containing silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and depositing a silicon and carbon containing layer on the dielectric layer. The dielectric constant of a dielectric layer deposited by reaction of an organosilicon compound having three or more methyl groups is significantly reduced by further depositing an amorphous hydrogenated silicon carbide layer by reaction of an alkylsilane in a plasma of a relatively inert gas.
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Citations
20 Claims
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1. A method for processing a substrate, comprising:
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reacting an organosilicon compound with carbon dioxide and one or more oxidizing gases selected from the group consisting of oxygen, ozone, nitrous oxide, carbon monoxide, and water to deposit a dielectric layer comprising silicon, carbon, and oxygen on the substrate; and
depositing a layer comprising silicon and carbon on the dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for processing a substrate, comprising:
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reacting an alkylsilane having one methyl group bonded to silicon with carbon dioxide and one or more oxidizing gases selected from the group consisting of oxygen, ozone, nitrous oxide, carbon monoxide, and water to deposit a dielectric layer comprising silicon, carbon, and oxygen on the substrate; and
depositing a layer comprising silicon and carbon on the dielectric layer. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A method for processing a substrate in a chemical vapor deposition chamber, comprising:
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introducing an organosilicon compound into the chamber;
introducing an oxidizing gas comprising carbon dioxide and one or more oxidizing gases selected from the group consisting of oxygen, ozone, nitrous oxide, carbon monoxide, and water into the chamber;
depositing a dielectric layer on the substrate using a chemical vapor deposition process at a substrate temperature between about 170°
C. and about 180°
C., wherein the dielectric layer comprises silicon, oxygen, and carbon; and
depositing a layer comprising silicon and carbon on the dielectric layer. - View Dependent Claims (17, 18, 19, 20)
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Specification