Detecting apparatus and device manufacturing method

• US 7,075,072 B2
• Filed: 09/10/2002
• Issued: 07/11/2006
• Est. Priority Date: 09/10/2001
• Status: Expired due to Term

• Current Assignee: Ebara Corporation, Toshiba Memory Corporation (Kioxia Corporation)
• Original Assignee: Ebara Corporation, Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Murakami, Takeshi, Yamazaki, Yuichiro, Noji, Nobuharu, Hatakeyama, Masahiro, Satake, Tohru, Nagahama, Ichirota
• Primary Examiner(s): Wells, Nikita
• Assistant Examiner(s): Johnston, Phillip A.
• Application Number:
  US10/237,986
• Publication Number:
  US 20030047682A1
• Time in Patent Office: 1,400 Days
• Field of Search: 250/281, 250/310, 430/296
• US Class Current: 250/310
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G03F 1/84 Inspecting
• CPC Class Codes: H01J 2237/2441 Semiconductor detectors, e.g. diodes
• CPC Class Codes: H01J 2237/2446 Position sensitive detectors
• CPC Class Codes: H01J 37/244 Detectors; Associated components or circuits therefor
• CPC Class Codes: H01J 37/285 Emission microscopes, e.g. field-emission microscopes

Abstract

A detecting apparatus for detecting a fine geometry on a surface of a sample, wherein an irradiation beam is irradiated against the sample placed in a different environment different from an atmosphere and a secondary radiation emanated from the sample is detected by a sensor, and wherein the sensor is disposed at an inside of the different environment, a processing device to process detection signals from the sensor is disposed at an outside of the different environment, and a transmission means transmits detection signals from the sensor to the processing device.

Claims

1. A detecting apparatus for detecting a defect on a surface of a sample, comprising:

an electron gun for emitting an irradiation beam toward the sample held in a vacuum environment so that secondary electrons are emanated from the sample;

an EB-TDI sensor for detecting the secondary electrons emanated from the sample, the EB-TDI sensor permitting the secondary electrons to enter the first sensor surface directly and accumulating and integrating charges on the sensor surface to form the two-dimensional image, said EB-TDI sensor being disposed in the vacuum environment;

a stage for mounting and moving the sample continuously in the direction of the integration on the sensor surface of the EB-TDI;

an electro-optical system for guiding the secondary electrons to the EB-TDI sensor; and

a feed through for transmitting a signal from the EB-TDI sensor to a processing device,

wherein the processing device processes the signal to detect a defect on the surface of the sample, and the processing device is disposed outside of the vacuum environment.

2. A detecting apparatus according to claim 1, wherein the electrons are reflected electrons.

3. A detecting apparatus according to claim 1, wherein the electrons are back scattered electrons.

4. A detecting apparatus according to claim 1, wherein the electro-optical system has at least one electrostatic lens.

5. A detecting apparatus according to claim 1, wherein the feed through further comprises a connecting socket.

6. A detecting apparatus according to claim 5, wherein the connecting socket has 100 or more pins.

7. A detecting apparatus according to claim 5, wherein the connecting socket includes at least one elastic member.

23. A detecting apparatus according to claim 1, further comprising a camera for receiving said signal from said EB-TDI sensor and outputting said signal to said processing device.

8. A detecting apparatus for detecting a defect on a surface of a sample, comprising:

an electron gun for emitting an irradiation beam toward the sample held in a vacuum environment so that secondary electrons are emanated from the sample;

an EB-TDI sensor for detecting the secondary electrons emanated from the sample, the EB-TDI sensor permitting the secondary electrons to enter the first sensor surface directly and accumulating and integrating charges on the sensor surface to form the two-dimensional image, said EB-TDI sensor being disposed in the vacuum environment;

a stage for mounting and moving the sample continuously in the direction of the integration on the sensor surface of the EB-TDI;

an electro-optical system for guiding the secondary electrons to the EB-TDI sensor, and

a sensor package for integrating the EB-TDI sensor and signal transmission pins located in the atmosphere, said at least one signal transmission pin being connected to a processing device in the atmosphere, said sensor package forming a feed through for transmitting a signal from the EB-TDI sensor to the processing device,

wherein the processing device processes the signal to detect a defect on the surface of the sample, and the processing device is disposed outside of the vacuum environment.

26. A detecting apparatus according to claim 8, further comprising a camera connected between said at least one signal transmission pin and said processing device.

9. A detecting apparatus for detecting a defect on a surface of a sample, comprising:

a radiation source for emitting an UV-ray or a Laser beam toward the sample held in a vacuum environment so that secondary electrons are emanated from the sample;

an EB-TDI sensor for detecting the secondary electrons emanated from the sample, the EB-TDI sensor permitting the secondary electrons to enter the first sensor surface directly and accumulating and integrating charges on the sensor surface to form the two-dimensional image, said EB-TDI sensor being disposed in the vacuum environment;

an electron-optical system for guiding the secondary electrons to the EB-TDI sensor;

a stage for mounting and moving the sample continuously in the direction of the integration on the sensor surface of the EB-TDI;

a feed through for transmitting a signal from the EB-TDI sensor to a processing device, wherein the processing device processes the signal to detect a defect on the surface of the sample, and the processing device is disposed outside of the vacuum environment.

10. A detecting apparatus according to claim 9, wherein the electro-optical system has at least one electrostatic lens.

11. A detecting apparatus according to claim 9, wherein the feed through further comprises a connecting socket.

12. A detecting apparatus according to claim 11, wherein the connecting socket has 100 or more pins.

13. A detecting apparatus according to claim 11, wherein the connecting socket includes at least one elastic member.

24. A detecting apparatus according to claim 9, further comprising a camera for receiving said signal from said EB-TDI sensor and outputting said signal to said processing device.

14. A detecting apparatus for detecting a defect on a surface of a sample, comprising:

a radiation source for emitting an UV-ray or a Laser beam toward the sample held in a vacuum environment so that secondary electrons are emanated from the sample;

an EB-TDI sensor for detecting the secondary electrons emanated from the sample, the EB-TDI sensor permitting the secondary electrons to enter the first sensor surface directly and accumulating and integrating charges on the sensor surface to form the two-dimensional image, said EB-TDI sensor being disposed in the vacuum environment;

an electron-optical system for guiding the secondary electrons to the EB-TDI sensor;

a stage for mounting and moving the sample continuously in the direction of the integration on the sensor surface of the EB-TDI; and

a sensor package for integrating the EB-TDI sensor and signal transmission pins located in the atmosphere, said at least one signal transmission pin being connected to a processing device in the atmosphere, said sensor package forming a feed through for transmitting a signal from the EB-TDI sensor to the processing device,

wherein the processing device processes the signal to detect a defect on the surface of the sample, and the processing device is disposed outside of the vacuum environment.

27. A detecting apparatus according to claim 14, further comprising a camera connected between said at least one signal transmission pin and said processing device.

15. A detecting apparatus for detecting a defect on a surface of a sample, comprising:

a radiation resource for emitting an electron beam and one of an UV-ray or a Laser beam toward the sample held in a vacuum environment so that secondary electrons are emanated from the sample;

an EB-TDI sensor for detecting the secondary electrons emanated from the sample, the EB-TDI sensor permitting the secondary electrons to enter the first sensor surface directly and accumulating and integrating charges on the sensor surface to form the two-dimensional image, said EB-TDI sensor being disposed in the vacuum environment;

an electron-optical system for guiding the secondary electrons to the EB-TDI sensor;

a stage for mounting and moving the sample continuously in the direction of the integration on the sensor surface of the EB-TDI; and

a feed through for transmitting a signal from the EB-TDI sensor to a processing device,

wherein the processing device processes the signal to detect a defect on the surface of the sample, and the processing device is disposed outside of the vacuum environment.

16. A detecting apparatus according to claim 15, wherein the electrons are reflected electrons.

17. A detecting apparatus according to claim 15, wherein the electrons are back scattered electrons.

18. A detecting apparatus according to claim 15, wherein the electro-optical system has at least one electrostatic lens.

19. A detecting apparatus according to claim 15, wherein the feed through further comprises a connecting socket.

20. A detecting apparatus according to claim 19, wherein the connecting socket has 100 or more pins.

21. A detecting apparatus according to claim 19, wherein the connecting socket includes at least one elastic member.

25. A detecting apparatus according to claim 15, further comprising a camera for receiving said signal from said EB-TDI sensor and outputting said signal to said processing device.

22. A detecting apparatus for detecting a defect on a surface of a sample, comprising:

a radiation resource for emitting an electron beam and one of an UV-ray or a Laser beam toward the sample held in a vacuum environment so that secondary electrons are emanated from the sample;

an EB-TDI sensor for detecting the secondary electrons emanated from the sample, the EB-TDI sensor permitting the secondary electrons to enter the first sensor surface directly and accumulating and integrating charges on the sensor surface to form the two-dimensional image, said sensor being disposed in the vacuum environment;

an electron-optical system for guiding the secondary electrons to the EB-TDI sensor;

a stage for mounting and moving the sample continuously in the direction of the integration on the sensor surface of the EB-TDI sensor; and

a sensor package for integrating the EB-TDI sensor and signal transmission pins located in the atmosphere, said at least one signal transmission pin being connected to a processing device in the atmosphere, said sensor package forming a feed through for transmitting a signal from the EB-TDI sensor to the processing device,

wherein the processing device processes the signal to detect a defect on the surface of the sample, and the processing device is disposed outside of the vacuum environment.

28. A detecting apparatus according to claim 22, further comprising a camera connected between said at least one signal transmission pin and said processing device.