Method of fabrication of an infrared radiation detector and infrared detector device
First Claim
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1. A method of controlling an internal stress in a polycrystalline silicon-germanium layer deposited on a substrate, the method comprising:
- selecting a range for the internal stress in the silicon germanium layer;
selecting a deposition pressure that is at or below atmospheric pressure; and
selecting a deposition temperature that is no greater than 700°
C.;
wherein the deposition pressure and the deposition temperature are selected such that the internal stress in the silicon-germanium layer is within the selected range.
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Abstract
A method of controlling an internal stress in a polycrystalline silicon-germanium layer deposited on a substrate. The method includes selecting a deposition pressure that is at or below atmospheric pressure and selecting a deposition temperature that is no greater than 700° C. The deposition pressure and the deposition temperature are selected so as to achieve an internal stress in the silicon-germanium layer that is within a predetermined range.
58 Citations
20 Claims
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1. A method of controlling an internal stress in a polycrystalline silicon-germanium layer deposited on a substrate, the method comprising:
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selecting a range for the internal stress in the silicon germanium layer; selecting a deposition pressure that is at or below atmospheric pressure; and selecting a deposition temperature that is no greater than 700°
C.;wherein the deposition pressure and the deposition temperature are selected such that the internal stress in the silicon-germanium layer is within the selected range. - View Dependent Claims (2, 3, 4, 5)
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6. A method of depositing a silicon-germanium layer, the method comprising:
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depositing a sacrificial layer on a substrate; depositing a silicon-germanium layer on said sacrificial layer using chemical vapor deposition; and removing at least a portion of said sacrificial layer from under said silicon-germanium layer such that a structural layer of a microelectromechanical device is formed from the silicon-germanium layer. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of depositing a silicon-germanium layer, the method comprising:
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depositing a sacrificial layer on a substrate; depositing a silicon-germanium layer on said sacrificial layer at a deposition temperature of no more than 700°
C.; andremoving at least a portion of said sacrificial layer from under said silicon-germanium layer such that a structural layer of a microelectromechanical device is formed from the silicon-germanium layer. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification