Image sensor with reduced p-well conductivity
First Claim
Patent Images
1. An image sensor comprising:
- (a) a substrate of the first conductivity type;
(b) a channel of the first conductivity type that spans at least a portion of the substrate;
(c) a well of the second conductivity type that is positioned between the channel and substrate for a predetermined portion, that spans a plurality of pixels and that is not between the substrate and the channel for a predetermined portion all of which well is substantially continuous; and
(d) a connection to the well;
wherein a resistance of the well not between the substrate and the channel is substantially equal to or greater than twenty five percent of a total resistance of the well between the channel and the substrate.
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Abstract
An image sensor includes a substrate of the first conductivity type; a channel of the first conductivity type that spans at least a portion of the substrate; a well of the second conductivity type that is positioned between the channel and substrate for a predetermined portion and that is not between the substrate and the channel for a predetermined portion all of which well is substantially continuous; and a connection to the well; wherein a resistance of the well not between the substrate and the channel is substantially equal to or greater than twenty five percent of a total resistance of the well between the channel and the substrate.
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Citations
4 Claims
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1. An image sensor comprising:
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(a) a substrate of the first conductivity type; (b) a channel of the first conductivity type that spans at least a portion of the substrate; (c) a well of the second conductivity type that is positioned between the channel and substrate for a predetermined portion, that spans a plurality of pixels and that is not between the substrate and the channel for a predetermined portion all of which well is substantially continuous; and (d) a connection to the well;
wherein a resistance of the well not between the substrate and the channel is substantially equal to or greater than twenty five percent of a total resistance of the well between the channel and the substrate. - View Dependent Claims (2)
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3. A camera comprising:
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an image sensor comprising; (a) a substrate of the first conductivity type; (b) a channel of the first conductivity type that substantially spans the substrate; (c) a well of the second conductivity type that is positioned between the channel and substrate for a predetermined portion, that spans a plurality of pixels and that is not between the substrate and the channel for a predetermined portion all of which well is substantially continuous; and (d) a connection to the well;
wherein a resistance of the well not between the substrate and the channel is substantially equal to or greater than twenty five percent of a total resistance of the well between the channel and the substrate. - View Dependent Claims (4)
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Specification