Boosting circuit and semiconductor device using the same
First Claim
1. A boosting circuit, comprising:
- a first charge pump circuit which contains a first capacitive section charged to a first voltage;
a second charge pump circuit which contains a second capacitive section charged to said first voltage;
a third charge pump circuit which contains a third capacitive section charged to said first voltage; and
a switching unit which connects said first charge pump circuit, said second charge pump circuit and a first node in series in response to a first switch signal and a control signal such that a second voltage higher than said first voltage is outputted from said first node to a first internal circuit of a semiconductor device, and connects said first charge pump circuit, said second charge pump circuit, said third charge pump circuit and a second node in series in response to a second switch signal and said control signal, such that a third voltage is outputted from said second node to a second internal circuit of said semiconductor device,wherein said switching unit comprises;
a first switching section which connects said first charge pump circuit and said second charge pump circuit in response to said control signal;
a second switching section which connects said second charge pump circuit and said first node in response to said control signal and said first switch signal;
a third switching section which connects said second charge pump circuit and said third charge pump circuit in response to said control signal and said second switch signal; and
a fourth switching section which connects said third charge pump circuit and said second node.
6 Assignments
0 Petitions
Accused Products
Abstract
A boosting circuit includes first to third charge pump circuits and a switching unit. The first to third charge pump circuit which contains first to third capacitive section charged to the first voltage, respectively. The switching unit connects the first charge pump circuit and the second charge pump circuit in series in response to a first switch signal and a control signal such that a second voltage higher than the first voltage is outputted from a first node to a first internal circuit of a semiconductor device. Also, the switching unit connects the first charge pump circuit, the second charge pump circuit and the third charge pump circuit in series in response to a second switch signal and the control signal, such that a third voltage is outputted from a second node to a second internal circuit of the semiconductor device.
22 Citations
14 Claims
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1. A boosting circuit, comprising:
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a first charge pump circuit which contains a first capacitive section charged to a first voltage; a second charge pump circuit which contains a second capacitive section charged to said first voltage; a third charge pump circuit which contains a third capacitive section charged to said first voltage; and a switching unit which connects said first charge pump circuit, said second charge pump circuit and a first node in series in response to a first switch signal and a control signal such that a second voltage higher than said first voltage is outputted from said first node to a first internal circuit of a semiconductor device, and connects said first charge pump circuit, said second charge pump circuit, said third charge pump circuit and a second node in series in response to a second switch signal and said control signal, such that a third voltage is outputted from said second node to a second internal circuit of said semiconductor device, wherein said switching unit comprises; a first switching section which connects said first charge pump circuit and said second charge pump circuit in response to said control signal; a second switching section which connects said second charge pump circuit and said first node in response to said control signal and said first switch signal; a third switching section which connects said second charge pump circuit and said third charge pump circuit in response to said control signal and said second switch signal; and a fourth switching section which connects said third charge pump circuit and said second node. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device, comprising:
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a boosting circuit; and first and second internal circuits connected to said boosting circuit via first and second nodes, wherein said boosting circuit comprises; a first charge pump circuit which contains a first capacitive section charged to a first voltage; a second charge pump circuit which contains a first capacitive section charged to said first voltage; a third charge pump circuit which contains a first capacitive section charged to said first voltage; and a switching unit which connects said first charge pump circuit, said second charge pump circuit and said first node in series in response to a first switch signal and a control signal such that a second voltage higher than said first voltage is outputted from said first node to said first internal circuit, and connects said first charge pump circuit, said second charge pump circuit, said third charge pump circuit and the second node in series in response to a second switch signal and said control signal, such that a third voltage is outputted from said second node to said second internal circuit, wherein said switching unit comprises; a first switching section which connects said first charge pump circuit and said second charge pump circuit in response to said control signal; a second switching section which connects said second charge pump circuit and said first node in response to said control signal and said first switch signal; a third switching section which connects said second charge pump circuit and said third charge pump circuit in response to said control signal and said second switch signal; and a fourth switching section which connects said third charge pump circuit and said second node. - View Dependent Claims (13, 14)
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Specification