Method of making active matrix substrate with pixel electrodes of photosensitive conductive material

• US 7,075,614 B2
• Filed: 12/31/2003
• Issued: 07/11/2006
• Est. Priority Date: 06/02/2000
• Status: Expired due to Fees

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Chikama, Yoshimasa, Izumi, Yoshihiro
• Primary Examiner(s): SCHECHTER, ANDREW M
• Application Number:
  US10/748,140
• Publication Number:
  US 20040150778A1
• Time in Patent Office: 923 Days
• Field of Search: 349/143, 349/187
• US Class Current: 349/187
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70

Abstract

There is provided an active matrix substrate which enables to shorten a fabrication process of a pixel electrode, improve exposure precision by self alignment, and prevent leakage failures between pixel electrodes. On top of the interlayer insulating film, there are formed pixel electrodes, which are connected to the TFTs through contact holes piercing through the interlayer insulating film. The pixel electrodes are formed by applying on the interlayer insulating film a photosensitive transparent resin such as negative acrylic polymerized resin containing ITO, ATO or ZnO as transparent conductive particles, performing exposure from the back side of the substrate, and conducting development.

Claims

1. A method of making an active matrix substrate, the method comprising:

forming switching elements disposed in a shape of a matrix, gate signal lines controlling the switching elements and extending in a first direction, and source signal lines connected to the switching elements and extending in a second direction perpendicular to the first direction on a front surface of a light permeable substrate;

forming an interlayer insulating film on the switching elements, the gate signal lines, and the source signal lines;

forming on the interlayer insulating film a negative type photosensitive transparent conductive material for a pixel electrode whose exposed parts are left in a pattern;

performing exposure from a back surface side of the light permeable substrate in order to expose the negative type photosensitive transparent conductive material in a self-alignment fashion by using the gate signal lines and the source signal lines as exposure masks;

developing the negative type photosensitive transparent conductive material so as to obtain pixel electrodes of the negative type photosensitive transparent conductive material by removing unexposed parts of the negative type photosensitive transparent conductive material.

2. The method of claim 1, wherein the negative type photosensitive conductive material comprises photosensitive resin and conductive particles dispersed in the photosensitive resin.

3. The method of claim 2, wherein the conductive particles comprise indium tin oxide or antimony tin oxide.

4. A method of making a flat panel display comprising the method of claim 1 for making the active matrix substrate of the flat panel display.

5. A method of making a flat panel image sensing device comprising the method of claim 1 for making the active matrix substrate thereof.