Semiconductor laser apparatus and production method thereof
First Claim
1. A semiconductor laser apparatus comprising:
- a semiconductor substrate whose main surface has a recess, a side wall of the recess having an optical reflector that receives a laser beam and reflects the received laser beam outward in a substrate-thickness direction;
a semiconductor laser element that is deposited in the recess and emits the laser beam toward the optical reflector in a direction substantially parallel to the main surface of the semiconductor substrate;
a heat sink layer that is formed in a bottom face of the recess so as to adjust a position of the semiconductor laser element in the substrate-thickness direction and to let heat, which is generated as the semiconductor laser element operates, escape toward the semiconductor substrate;
a bonding layer formed in contact with a surface, which faces the bottom face of the recess, of the semiconductor laser element; and
a diffusion preventing layer that is embedded between the heat sink layer and the bonding layer, possesses electrical conductivity, and prevents a diffusion from occurring between the heat sink layer and the bonding layer.
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Accused Products
Abstract
A semiconductor blue-light-laser apparatus for emitting laser beams with high positional accuracy, which is achieved by mounting a semiconductor laser element on a semiconductor substrate with high accuracy and reliability, and a production method of the apparatus. A recess in a surface of the substrate has a p-type layer 100, which is coated with the SiN layer 105, Ti layers 110a and 110b, Au layers 111a and 111b, heat sink layer 113, and solder layer 114. Semiconductor laser element 10 is placed and fixed on Au layer 111b. Heat sink layer 113 is inserted between Au layer 111a and Ti layer 110b and is approximately 20 μm thick. Reflection unit 50 for reflecting laser beams LB includes at the surface thereof Al layer 116 and dielectric layer 117 as a reflection layer that provides a high refractive index for blue light laser beams.
28 Citations
13 Claims
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1. A semiconductor laser apparatus comprising:
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a semiconductor substrate whose main surface has a recess, a side wall of the recess having an optical reflector that receives a laser beam and reflects the received laser beam outward in a substrate-thickness direction; a semiconductor laser element that is deposited in the recess and emits the laser beam toward the optical reflector in a direction substantially parallel to the main surface of the semiconductor substrate; a heat sink layer that is formed in a bottom face of the recess so as to adjust a position of the semiconductor laser element in the substrate-thickness direction and to let heat, which is generated as the semiconductor laser element operates, escape toward the semiconductor substrate; a bonding layer formed in contact with a surface, which faces the bottom face of the recess, of the semiconductor laser element; and a diffusion preventing layer that is embedded between the heat sink layer and the bonding layer, possesses electrical conductivity, and prevents a diffusion from occurring between the heat sink layer and the bonding layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification