Deep reactive ion etching process and microelectromechanical devices formed thereby

• US 7,077,007 B2
• Filed: 11/18/2003
• Issued: 07/18/2006
• Est. Priority Date: 02/14/2001
• Status: Expired due to Fees

• Current Assignee: Google LLC (Alphabet Inc.)
• Original Assignee: Delphi Technologies, Inc. (BorgWarner Incorporated)
• Inventors: Rich, David Boyd, Christenson, John C.
• Primary Examiner(s): KWOK, HELEN C
• Application Number:
  US10/715,758
• Publication Number:
  US 20040099631A1
• Time in Patent Office: 973 Days
• Field of Search: 735/143.2, 735/141.6, 735/142.9, 735/143.8, 735/141.7, 735/140.1, 735/140.2, 735/041.2, 735/041.8, 735/140.4
• US Class Current: 73/514.02
• CPC Class Codes: B81B 2201/025 Inertial sensors not provided for in B81B2201/0235 - B81B2201/0242
• CPC Class Codes: B81B 2203/0118 Cantilevers
• CPC Class Codes: B81C 1/00404 Mask characterised by its size, orientation or shape
• CPC Class Codes: B81C 1/00587 Processes for avoiding or controlling over-etching not provided for in B81C1/00571 - B81C1/00579
• CPC Class Codes: B81C 2201/0132 Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/0888 for indicating angular acceleration
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

A process for forming a microelectromechanical system (MEMS) device by a deep reactive ion etching (DRIE) process during which a substrate overlying a cavity is etched to form trenches that breach the cavity to delineate suspended structures. A first general feature of the process is to define suspended structures with a DRIE process, such that the dimensions desired for the suspended structures are obtained. A second general feature is the proper location of specialized features, such as stiction bumps, vulnerable to erosion caused by the DRIE process. Yet another general feature is to control the environment surrounding suspended structures delineated by DRIE in order to obtain their desired dimensions. A significant problem identified and solved by the invention is the propensity for the DRIE process to etch certain suspended features at different rates. In addition to etching wider trenches more rapidly than narrower trenches, the DRIE process erodes suspended structures more rapidly at greater distances from anchor sites of the substrate being etched. At the masking level, the greater propensity for backside and lateral erosion of certain structures away from substrate anchor sites is exploited so that, at the completion of the etch process, suspended structures have acquired their respective desired widths.

Claims

1. A microelectromechanical device comprising:

a substrate having a cavity, a floor of the cavity, and a rim surrounding the cavity;

a proof mass supported within the cavity so as to have an axis of rotation perpendicular to the substrate;

first fingers cantilevered radially outward from the proof mass toward the rim;

second fingers cantilevered radially inward from the rim toward the proof mass and interdigitized with the first fingers; and

tethers interconnecting the proof mass and the rim;

wherein the microelectromechanical device further comprises a plurality of stiction bumps located on the floor of the cavity beneath the proof mass, and a stiction bump on at least one of the second fingers facing a corresponding one of the first fingers;

wherein the proof mass surrounds a hub on the floor of the cavity and has a peripheral region adjacent the first fingers, and wherein a first of the plurality of stiction bumps on the floor of the cavity surround the hub, a second of the plurality of stiction bumps on the floor of the cavity are directly beneath the peripheral region of the proof mass, and an annular-shaped central region of the cavity is free of stiction bumps.

2. The microelectromechanical device according to claim 1, wherein the first and second fingers have approximately equal widths in a direction parallel to a surface of the substrate.

3. The microelectromechanical device according to claim 1, wherein each of the tethers has a substantially constant width in a direction parallel to a surface of the substrate along a length of the tether between the proof mass and the rim.

4. The microelectromechanical device according to claim 1, wherein a stiction bump is present on each of the second fingers and the stiction bumps face the first fingers with which the second fingers are interdigitized.