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Self-aligned trench MOSFETs and methods for making the same

  • US 7,078,296 B2
  • Filed: 01/16/2002
  • Issued: 07/18/2006
  • Est. Priority Date: 01/16/2002
  • Status: Expired due to Term
First Claim
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1. A method for making a semiconductor device, comprising:

  • providing a substrate with an upper surface, the substrate having a trench therein;

    providing an oxide layer on a bottom and sidewall of the trench;

    providing a conductive layer on a bottom and sidewall of the oxide layer, the conductive layer having an upper surface below the upper surface of the substrate; and

    providing a self-aligned isolation cap on the conductive layer within the trench, the isolation cap comprising a non-organic dielectric material, including providing the self-aligned isolation cap by providing a first dielectric layer, providing a second dielectric layer over the first dielectric layer, reflowing the second dielectric layer, and then anisotropically etching the first and second dielectric layers until the upper substrate surface is exposed.

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