Method and system for source switching and in-situ plasma bonding
First Claim
1. A method for in-situ plasma treatment of substrates, the method comprising:
- positioning a first face of a first substrate to face a second face of a second substrate;
maintaining a predetermined gap between the first face and the second face;
initiating a plasma within the predetermined gap using a first bias characterized by a first frequency, the first bias being applied to the first substrate while the second substrate is maintained at a first potential;
maintaining the plasma within a vicinity of the first face and the second face to initiate a plasma treatment on either or both the first face and the second face; and
switching the first bias on the first substrate to the second substrate while the first substrate is switched to a second potential.
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Abstract
A system for in-situ plasma treatment. The system has a processing chamber, e.g., plasma chamber. The system has a first susceptor coupled within the chamber and a second susceptor facing the first susceptor and being within the chamber. The system has one or more power sources. Preferably, a first power source is characterized by a first frequency. The first power source is coupled to the first susceptor and the second susceptor. A second power source is characterized by a second frequency. The second power source is coupled to the first susceptor and the second susceptor. A switching device is coupled to the first power source and is coupled the second power source. The switching device is configured to selectively apply the first frequency to the first susceptor while the second frequency is applied to the second susceptor and is alternatively configured to selectively apply the first frequency to the second susceptor while the second frequency is applied to the first susceptor.
43 Citations
21 Claims
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1. A method for in-situ plasma treatment of substrates, the method comprising:
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positioning a first face of a first substrate to face a second face of a second substrate; maintaining a predetermined gap between the first face and the second face; initiating a plasma within the predetermined gap using a first bias characterized by a first frequency, the first bias being applied to the first substrate while the second substrate is maintained at a first potential; maintaining the plasma within a vicinity of the first face and the second face to initiate a plasma treatment on either or both the first face and the second face; and switching the first bias on the first substrate to the second substrate while the first substrate is switched to a second potential. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification