Vertical unipolar component

• US 7,078,783 B2
• Filed: 01/29/2004
• Issued: 07/18/2006
• Est. Priority Date: 01/30/2003
• Status: Active Grant

• Current Assignee: Stmicroelectronics France (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SA (STMicroelectronics NV)
• Inventors: Lanois, Frédéric
• Primary Examiner(s): NGO, NGAN V
• Application Number:
  US10/767,568
• Publication Number:
  US 20040183115A1
• Time in Patent Office: 901 Days
• Field of Search: 257/471, 257/475, 257/476, 257/481, 257/483, 257/485, 257/486, 257/603, 257/605, 257/606
• US Class Current: 257/483
• CPC Class Codes: H01L 29/404 Multiple field plate structures
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/872 Schottky diodes
• CPC Class Codes: H01L 29/8725 of the trench MOS barrier type [TMBS]

Abstract

A vertical unipolar component formed in a semiconductor substrate. An upper portion of the substrate includes insulated trenches filled with a vertical multiple-layer of at least two conductive elements separated by an insulating layer, the multiple-layer depth being at most equal to the thickness of the upper portion.

Claims

1. A vertical unipolar component formed in a semiconductor substrate, said component comprising junctions formed at the surface of parts of said substrate separated with insulated trenches extending in an upper portion of the substrate, in which the insulated trenches are filled with a vertical multiple-layer of at least two conductive elements separated by an insulating layer, the multiple-layer depth being, at most, equal to the thickness of said upper portion.

2. The component of claim 1, wherein the multiple-layer depth is equal to the thickness of the upper portion, the insulating layer also separating the elements of a substrate portion underlying the upper portion.

3. The component of claim 1, wherein at least part of the elements are conductive grains.

4. The component of claim 1, wherein at least part of the elements are blocks exhibiting, in top view, a same surface area as the multiple-layer.

5. The component of claim 1, forming a Schottky diode having its cathode corresponding to said upper portion.

6. A vertical unipolar component formed in a semiconductor substrate, the component comprising junctions formed at a surface of regions of the substrate separated by insulated trenches extending in an upper portion of the substrate, wherein the insulated trenches contain at least two conductive elements separated by an insulating layer.

7. The component of claim 6, wherein a depth of the at least two conductive elements separated by an insulating layer is, at most, equal to a thickness of the upper portion.

8. The component of claim 6, wherein the insulating layer also separates elements of a substrate portion underlying the upper portion.

9. The component of claim 6, wherein at least part of the elements are conductive grains.

10. The component of claim 6, wherein at least part of the elements are blocks exhibiting, in top view, a same surface area as one of the trenches.

11. The component of claim 6, forming a Schottky diode having its cathode corresponding to said upper portion.