High frequency power amplifier circuit
First Claim
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1. A high-frequency power amplifier module to be used in a cellular phone, the high-frequency power amplifier module comprising:
- a first power transistor having a control terminal and an output terminal;
a first capacitor having a first end coupled to receive a high frequency signal to be amplified by the first power transistor and a second end coupled to the control terminal of the first power transistor;
a first transistor having an input terminal and a control terminal directly coupled to each other, the control terminal thereof being coupled to the control terminal of the first power transistor;
a second capacitor having a first end coupled to an output terminal of the first power transistor and a second end;
a second power transistor having a control terminal coupled to the second end of the second capacitor and an output terminal;
a second transistor having an input terminal and a control terminal coupled to each other, the control terminal thereof being coupled to the control terminal of the second power transistor;
a first bias circuit which provides a first bias current to the input terminal of the first transistor;
a second bias circuit which provides a second bias current to the input terminal of the second transistor.
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Abstract
A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.
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Citations
3 Claims
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1. A high-frequency power amplifier module to be used in a cellular phone, the high-frequency power amplifier module comprising:
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a first power transistor having a control terminal and an output terminal; a first capacitor having a first end coupled to receive a high frequency signal to be amplified by the first power transistor and a second end coupled to the control terminal of the first power transistor; a first transistor having an input terminal and a control terminal directly coupled to each other, the control terminal thereof being coupled to the control terminal of the first power transistor; a second capacitor having a first end coupled to an output terminal of the first power transistor and a second end; a second power transistor having a control terminal coupled to the second end of the second capacitor and an output terminal; a second transistor having an input terminal and a control terminal coupled to each other, the control terminal thereof being coupled to the control terminal of the second power transistor; a first bias circuit which provides a first bias current to the input terminal of the first transistor; a second bias circuit which provides a second bias current to the input terminal of the second transistor. - View Dependent Claims (2, 3)
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Specification
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Current AssigneeRenesas Electronics Corporation
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Original AssigneeHitachi Communication Systems Incorporated (Hitachi, Ltd.), Renesas Technology Corporation (Renesas Electronics Corporation)
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InventorsTsutsui, Takayuki, Matsudaira, Nobuhiro, Morisawa, Fuminori, Matsushita, Kouichi, Furuya, Tomio
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Primary Examiner(s)Choe, Henry
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Application NumberUS11/227,160Publication NumberTime in Patent Office305 DaysField of Search330/285, 330/288, 330/133, 330/310, 330/311, 323/315, 323/316US Class Current330/285CPC Class CodesH03F 1/301 in MOSFET amplifiers H03F1/...H03G 3/3042 in modulators, frequency-ch...
