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High frequency power amplifier circuit

  • US 7,078,974 B2
  • Filed: 09/16/2005
  • Issued: 07/18/2006
  • Est. Priority Date: 06/29/2001
  • Status: Expired due to Term
First Claim
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1. A high-frequency power amplifier module to be used in a cellular phone, the high-frequency power amplifier module comprising:

  • a first power transistor having a control terminal and an output terminal;

    a first capacitor having a first end coupled to receive a high frequency signal to be amplified by the first power transistor and a second end coupled to the control terminal of the first power transistor;

    a first transistor having an input terminal and a control terminal directly coupled to each other, the control terminal thereof being coupled to the control terminal of the first power transistor;

    a second capacitor having a first end coupled to an output terminal of the first power transistor and a second end;

    a second power transistor having a control terminal coupled to the second end of the second capacitor and an output terminal;

    a second transistor having an input terminal and a control terminal coupled to each other, the control terminal thereof being coupled to the control terminal of the second power transistor;

    a first bias circuit which provides a first bias current to the input terminal of the first transistor;

    a second bias circuit which provides a second bias current to the input terminal of the second transistor.

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