Combined coating process comprising magnetic field-assisted, high power, pulsed cathode sputtering and an unbalanced magnetron

• US 7,081,186 B2
• Filed: 11/20/2003
• Issued: 07/25/2006
• Est. Priority Date: 11/20/2003
• Status: Expired due to Fees

• Current Assignee: Sheffield Hallam University
• Original Assignee: Sheffield Hallam University
• Inventors: Hovsepian, Papken Ehiasar, Ehiasarian, Arutiun Papken, Munz, Wolf-Dieter
• Primary Examiner(s): MCDONALD, RODNEY GLENN
• Application Number:
  US10/718,435
• Publication Number:
  US 20050109607A1
• Time in Patent Office: 978 Days
• Field of Search: 204/192.12, 204/192.15, 204/192.16, 204/192.3
• US Class Current: 204/192.12
• CPC Class Codes: C23C 14/022 by means of bombardment with energetic particles or radiation

Abstract

A PVD process for coating substrates, wherein the substrate is pre-treated in the vapor of a pulsed, magnetic field-assisted cathode sputtering operation, and during pre-treatment a magnetic field arrangement of the magnetron cathode type, with a strength of the horizontal component in front of the target of 100 to 1500 Gauss, is used for magnetic field-assistance, and after pre-treatment further coating is effected by means of cathode sputtering and the power density of the pulsed discharge during pre-treatment is greater than 1000 W.cm⁻².

Claims

1. A PVD process for coating substrates, wherein the substrate is pre-treated in the vapour of a pulsed, magnetic field-assisted cathode sputtering operation, and during pre-treatment a magnetic field arrangement of a magnetron cathode, with a strength of the horizontal component in front of a target of 100 to 1500 Gauss, is used for magnetic field-assistance, and wherein after pre-treatment further coating is effected by means of cathode sputtering, with a power density of the pulse, magnetic field assisted cathode sputtering operation, during pre-treatment being greater than 1000 W.cm⁻

2.

2. A process in accordance with claim 1 wherein the power density falls within the range from 2000 to 3000 W.cm⁻

2.

3. A process in accordance with claim 1 wherein a pulse duration (on-time) ranges between 10 and 1000 μ

s, and that the pulse interval (repetition period) is between 0.2 ms and 1000 s.

4. A process in accordance with claim 1 wherein a pulse duration is 50 μ

s and a pulse interval is 20 ms.

5. A process in accordance with claim 1 wherein magnetron discharge is distributed over a cathode surface area and occupies at least 50% of the surface area.

6. A process in accordance with claim 5 wherein the discharge is distributed over 70–

90% of the cathode surface area.

7. A process in accordance with claim 1 wherein an average pulsed discharge current density is less than 10 A.cm⁻

2.

8. A process in accordance with claim 1 wherein a localised maximum pulsed discharge current density is less than 100 A.cm⁻

2.

9. A process in accordance with claim 1 wherein pulses which are generated have a peak voltage from 0.5 to 2.5 kV.

10. A process in accordance with claim 1 wherein pre-treatment with the magnetic field-assisted cathode sputtering operation is conducted in a non-reactive atmosphere, selected from a group consisting of Ne, Ar, Kr and Xe, with targets which includes material selected from a group consisting of Cr, V, Ti, Zr, Mo, W, Nb and Ta.

11. A process in accordance with claim 1 wherein pre-treatment is effected with Ar in the pressure range from 10⁻

5 to 10<sup>−

1</sup> mbar.

12. A process in accordance with claim 1 wherein pre-treatment is effected with Ar at a pressure of 10⁻

3 mbar.

13. A process in accordance with claim 1 wherein during pre-treatment a negative bias voltage within the range from 0.5 to 1.5 kV is applied to the substrates, so that an etching or cleaning process is initiated simultaneously with an ion implantation process (ABS technique).

14. A process in accordance with claim 13 wherein the negative bias voltage is pulsed with pulse widths of 2 μ

s to 20 ms and a pulse interval which is likewise 2 μ

s to 20 ms.

15. A process in accordance with claim 1 wherein the coating formed by cathode sputtering consists of the nitrides TiN, ZrN, TiAlN, TiZrN, TiWN, TiNbN, TiTaN, TiBN or the carbonitrides TiCN, ZrCN, TiAlCN, TiZrCN, TiVCN, TiNbCN, TiTaCN or TiBCN.

16. A process in accordance with claim 1 wherein the coating contains 0.1 to 5 atomic % of an element selected from the group of Sc, Y, La and Ce.

17. A process in accordance with claim 1 wherein the coating consists of nanometer-scale multi-layer coatings with a periodicity of 1 to 10 nm, from the group comprising TiN/TiAlN, TiN/VN, TiN/NbN, TiN/TaN, TiN/ZrN, TiAlN/CrN, TiAlN/ZrN, TiAlN/Vn, CrN/NbN, CrN/Tan, CrN/TiN, Cr/C, Ti/C, Zr/C, V/C, Nb/C or Ta/C.

18. A process in accordance with claim 17 wherein one of the cited individual layers contains 0.1 to 5 atomic % of an element selected from the group of Sc, Y, La and Ce.

19. A process in accordance with claim 17 wherein both of the cited individual layers contain 0.1 to 5 atomic % of an element selected from the group of Sc, Y, La and Ce.

20. A process in accordance with claim 1 wherein the cathode sputtering employed during coating is unbalanced magnetron sputtering.

21. A process in accordance with claim 1 wherein identical cathodes and identical magnetic field arrangements are used for pre-treatment and coating.

22. A process in accordance with claim 21 wherein specific adaptations of a magnetic field strength are made, by adjusting the distance of a magnet array from a target surface, in order to optimise the pre-treatment and coating operations.