Method of fabricating semiconductor device comprising pixel having numerical aperture
First Claim
1. A method of fabricating a semiconductor device comprising:
- forming a gate electrode of a TFT and a source wiring of the TFT over an insulating surface;
forming a first insulating film over the gate electrode and the source wiring;
forming a semiconductor film of the TFT over the first insulating film;
forming a second insulating film over the semiconductor film; and
forming, over the second insulating film, a gate wiring connected to the gate electrode, a connection electrode for connecting the source wiring and the semiconductor film together, and a pixel electrode connected to the semiconductor film.
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Accused Products
Abstract
An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.
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Citations
37 Claims
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1. A method of fabricating a semiconductor device comprising:
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forming a gate electrode of a TFT and a source wiring of the TFT over an insulating surface; forming a first insulating film over the gate electrode and the source wiring; forming a semiconductor film of the TFT over the first insulating film; forming a second insulating film over the semiconductor film; and forming, over the second insulating film, a gate wiring connected to the gate electrode, a connection electrode for connecting the source wiring and the semiconductor film together, and a pixel electrode connected to the semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of fabricating a semiconductor device comprising:
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forming a gate electrode of a TFT and a source wiring of the TFT over an insulating surface; forming a first insulating film over the gate electrode and the source wiring; forming a semiconductor film of the TFT over the first insulating film so as to be partly overlapped over the gate electrode; forming a second insulating film over the semiconductor film; and forming, over the second insulating film, a gate wiring connected to the gate electrode, a connection electrode for connecting the source wiring and the semiconductor film together, and a pixel electrode connected to the semiconductor film. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A method of fabricating a semiconductor device comprising:
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forming a gate electrode of a TFT and a source wiring of the TFT over an insulating surface; forming a first insulating film over the gate electrode and the source wiring; forming a semiconductor film over the first insulating film; forming a source region and a drain region of the TFT in the semiconductor film; forming a second insulating film over the semiconductor film; and forming, over the second insulating film, a gate wiring connected to the gate electrode, a connection electrode for connecting the source wiring and the source region together, and a pixel electrode connected to the drain region. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A method of fabricating a semiconductor device comprising:
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forming a first gate electrode of a TFT, a second gate electrode of the TFT and a source wiring of the TFT over an insulating surface; forming a first insulating film over the first and second gate electrodes and the source wiring; forming, over the first insulating film, a first semiconductor film of the TFT that overlaps over the first gate electrode and a second semiconductor film that overlaps over the second gate electrode; forming a source region and a drain region of the TFT in the first semiconductor film; forming a second insulating film over at least one of the first semiconductor film and the second semiconductor film; and forming, over the second insulating film, a gate wiring connected to the first gate electrode, a connection electrode for connecting the source wiring and the source region together, and a pixel electrode for connecting the drain region and the second semiconductor film together. - View Dependent Claims (21, 22, 23, 24, 25)
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26. A method of fabricating a semiconductor device comprising:
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forming a gate electrode of a TFT and a source wiring of the TFT over an insulating surface simultaneously; forming a first insulating film over the gate electrode and the source wiring; forming a semiconductor film of the TFT over the first insulating film; forming a second insulating film over the semiconductor film; and forming, over the second insulating film, a gate wiring connected to the gate electrode, a connection electrode for connecting the source wiring and the semiconductor film together, and a pixel electrode connected to the semiconductor film. - View Dependent Claims (27, 28, 29, 30, 31)
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32. A method of fabricating a semiconductor device comprising:
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forming a gate electrode of a TFT and a source wiring of the TFT over an insulating surface simultaneously; forming a first insulating film over the gate electrode and the source wiring; forming a semiconductor film of the TFT over the first insulating film; forming a second insulating film over the semiconductor film; and forming, over the second insulating film, a gate wiring connected to the gate electrode, a connection electrode for connecting the source wiring and the semiconductor film together, and a pixel electrode connected to the semiconductor film simultaneously. - View Dependent Claims (33, 34, 35, 36, 37)
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Specification