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Treatment for corrosion in substrate processing

  • US 7,084,070 B1
  • Filed: 07/17/2003
  • Issued: 08/01/2006
  • Est. Priority Date: 03/30/2001
  • Status: Expired due to Term
First Claim
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1. A method for processing substrate to form a semiconductor device, said substrate including an etch stop layer disposed above a metal layer, comprising:

  • etching through said etch stop layer, using a plasma etch process that utilizes a chlorine-containing etchant source gas, thereby forming etch stop layer openings in said etch stop layer, said etch stop layer including at least one of a SiN and SiC material;

    performing a de-ionized water rinse on said substrate; and

    thereafter performing a wet treatment on said substrate, said wet treatment including a rinse using a solution that contains acetic acid (CH3COOH).

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