Treatment for corrosion in substrate processing
First Claim
1. A method for processing substrate to form a semiconductor device, said substrate including an etch stop layer disposed above a metal layer, comprising:
- etching through said etch stop layer, using a plasma etch process that utilizes a chlorine-containing etchant source gas, thereby forming etch stop layer openings in said etch stop layer, said etch stop layer including at least one of a SiN and SiC material;
performing a de-ionized water rinse on said substrate; and
thereafter performing a wet treatment on said substrate, said wet treatment including a rinse using a solution that contains acetic acid (CH3COOH).
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Abstract
A method for processing substrate to form a semiconductor device is disclosed. The substrate includes an etch stop layer disposed above a metal layer. The method includes etching through the etch stop layer down to the copper metal layer, using a plasma etch process that utilizes a chlorine-containing etchant source gas, thereby forming etch stop layer openings in the etch stop layer. The etch stop layer includes at least one of a SiN and SiC material. Thereafter, the method includes performing a wet treatment on the substrate using a solution that contains acetic acid (CH3COOH) or acetic acid/ammonium hydroxide (NH4OH) to remove at least some of the copper oxides. Alternatively, the copper oxides may be removed using a H2 plasma. BTA passivation may be optionally performed on the substrate.
283 Citations
50 Claims
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1. A method for processing substrate to form a semiconductor device, said substrate including an etch stop layer disposed above a metal layer, comprising:
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etching through said etch stop layer, using a plasma etch process that utilizes a chlorine-containing etchant source gas, thereby forming etch stop layer openings in said etch stop layer, said etch stop layer including at least one of a SiN and SiC material; performing a de-ionized water rinse on said substrate; and thereafter performing a wet treatment on said substrate, said wet treatment including a rinse using a solution that contains acetic acid (CH3COOH). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for performing a dual damascene process on a substrate, said substrate including a dielectric layer disposed above an etch stop layer, said etch stop layer being disposed above a metal layer, comprising:
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performing plasma etching through said dielectric layer using a first etchant source gas to form a plurality of dielectric-layer openings; performing plasma etching through said etch stop layer, using a second etchant source gas different from said first etchant source gas, said second etchant source gas including chlorine, thereby forming etch stop layer openings in said etch stop layer, said etch stop layer including at least one of a SiN and SiC material; performing one of a de-ionized water rinse and a HCl dip/de-ionized water rinse on said substrate; and thereafter performing a wet treatment on said substrate, said wet treatment including a rinse using a solution that contains acetic acid (CH3COOH). - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method for processing substrate to form a semiconductor device, said substrate including an etch stop layer disposed above a metal layer, comprising:
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etching through said etch stop layer, using a plasma etch process that utilizes a chlorine-containing etchant source gas, wherein said chlorine-containing etchant source gas includes an inert gas, said inert gas including at least one of Ar, He, Ne, Kr, and Xe, thereby forming etch stop layer openings in said etch stop layer, said etch stop layer including at least one of a SiN and SiC material; performing a HCL solution dip on said substrate; thereafter performing a rinse on said substrate, said rinse using a rinsing solution that includes de-ionized water; and thereafter performing a H2 plasma treatment on said substrate. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30)
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31. A method for processing substrate to form a semiconductor device, said substrate including an etch stop layer disposed above a copper metal layer, comprising:
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etching through said etch stop layer, using a plasma etch process that utilizes a chlorine-containing etchant source gas, thereby forming etch stop layer openings in said etch stop layer, said etch stop layer including at least one of a SiN and SiC material; performing a wet chemical treatment on said substrate, said wet chemical treatment employing a solution that includes an organic acid or a mixture of an organic acid and a hydroxide; and thereafter passivating said copper metal layer through said etch stop layer openings with a passivating solution that includes benzotriazole(BTA). - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39)
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40. A method for processing substrate to form a semiconductor device, said substrate including an etch stop layer disposed above a metal layer, comprising:
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etching through said etch stop layer, using a plasma etch process that utilizes a chlorine-containing etchant source gas, thereby forming etch stop layer openings in said etch stop layer, said etch stop layer including at least one of a SiN and SiC material; performing a HCL dip/de-ionized water rinse on said substrate; and thereafter performing a wet treatment on said substrate, said wet treatment including a rinse using a solution that contains acetic acid (CH3COOH). - View Dependent Claims (41, 42, 43, 44, 45, 46, 47, 48, 49, 50)
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Specification