Nitride based semiconductor device
First Claim
1. A nitride based semiconductor device comprising an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, and an active layer formed between the p-type nitride semiconductor layer and n-type nitride semiconductor layer and having a quantum well layer and a quantum barrier layer,wherein the device includes an electron emitting layer formed of at least two repeats of first nitride semiconductor layers and second nitride semiconductor layers having different compositions, disposed between the n-type nitride semiconductor layer and the active layer,the first nitride semiconductor layers have an energy band gap greater than that of the quantum well layer, smaller than that of the quantum barrier layer, and decreasing closer to the active layer, andthe second nitride semiconductor layers have an energy band gap at least higher than that of the adjacent first nitride semiconductor layer(s) and have a thickness such that electrons accumulated in the first nitride semiconductor layer can be tunneled toward the active layer.
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Abstract
The present invention provides a nitride based semiconductor device comprising an active layer having a quantum well layer and a quantum barrier layer, wherein the device includes an electron emitting layer formed of at least two repeats of a first nitride semiconductor layer and a second nitride semiconductor layer having different compositions between a n-type nitride semiconductor layer and the active layer, the first nitride semiconductor layer has an energy band gap greater than that of the quantum well layer, smaller than that of the quantum barrier layer, and decreasing closer to the active layer, and the second nitride semiconductor layer has an energy band gap at least higher than that of the adjacent first nitride semiconductor layer(s) and has a thickness capable of tunneling electrons.
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Citations
13 Claims
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1. A nitride based semiconductor device comprising an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, and an active layer formed between the p-type nitride semiconductor layer and n-type nitride semiconductor layer and having a quantum well layer and a quantum barrier layer,
wherein the device includes an electron emitting layer formed of at least two repeats of first nitride semiconductor layers and second nitride semiconductor layers having different compositions, disposed between the n-type nitride semiconductor layer and the active layer, the first nitride semiconductor layers have an energy band gap greater than that of the quantum well layer, smaller than that of the quantum barrier layer, and decreasing closer to the active layer, and the second nitride semiconductor layers have an energy band gap at least higher than that of the adjacent first nitride semiconductor layer(s) and have a thickness such that electrons accumulated in the first nitride semiconductor layer can be tunneled toward the active layer.
Specification