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Uniform color phosphor-coated light-emitting diode

  • US 7,084,434 B2
  • Filed: 11/26/2003
  • Issued: 08/01/2006
  • Est. Priority Date: 04/15/2003
  • Status: Active Grant
First Claim
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1. A light-emitting device, comprising:

  • a multi-layer stack of materials including a light-generating region, a layer of p-doped semiconductor material, and a layer of n-doped semiconductor material supported by the light-generating region, a surface of the layer of n-doped semiconductor material being configured so that light generated by the light-generating region can emerge from the light-emitting device via the surface of the layer of n-doped semiconductor material, the surface of the layer of n-doped semiconductor material having a dielectric function that varies spatially according to a pattern;

    a support that supports the multi-layer stack of materials;

    a layer of reflective material that is capable of reflecting at least about 50% of light generated by the light-generating region that impinges on the layer of reflective material, the layer of reflective material being between the support and the multi-layer stack of materials such that a distance between the layer of p-doped semiconductor material and the layer of reflective material is less than a distance between the layer of n-doped semiconductor material and the layer of reflective material; and

    a phosphor material disposed on the surface of the layer of n-doped semiconductor material,wherein sidewalls of the light-emitting device are substantially devoid of the phosphor material.

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