Trench MOSFET with recessed clamping diode using graded doping

• US 7,084,456 B2
• Filed: 06/24/2003
• Issued: 08/01/2006
• Est. Priority Date: 05/25/1999
• Status: Expired due to Term

• Current Assignee: Advanced Analogic Technologies Incorporated (Skyworks Solutions Incorporated)
• Original Assignee: Advanced Analogic Technologies Incorporated (Skyworks Solutions Incorporated)
• Inventors: Williams, Richard K., Chan, Wai Tien, Cornell, Michael E.
• Primary Examiner(s): Parker, Kenneth
• Assistant Examiner(s): Warren, Matthew E.
• Application Number:
  US10/606,112
• Publication Number:
  US 20050035398A1
• Time in Patent Office: 1,134 Days
• Field of Search: 257328-333, 257/335, 257/E29.131, 257/E29.256, 257/E29.257, 257/E29.26, 257/611
• US Class Current: 257/329
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/2652 Through-implantation
• CPC Class Codes: H01L 29/0847 of field-effect transistors with insulated gate H01L29/0653 takes precedence; with a passive supplementary region between source or drain and substrate related to punch-through, capacity or isolation phenomena H01L29/1079; with LDD or DDD structure H01L29/7833; for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/4232 with insulated gate
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7808 the other device being a breakdown diode, e.g. Zener diode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence

Abstract

In a trench-gated MOSFET including an epitaxial layer over a substrate of like conductivity and trenches containing thick bottom oxide, sidewall gate oxide, and conductive gates, body regions of the complementary conductivity are shallower than the gates, and clamp regions are deeper and more heavily doped than the body regions but shallower than the trenches. Zener junctions clamp a drain-source voltage lower than the FPI breakdown of body junctions near the trenches, but the zener junctions, being shallower than the trenches, avoid undue degradation of the maximum drain-source voltage. The epitaxial layer may have a dopant concentration that increases step-wise or continuously with depth. Chained implants of the body and clamp regions permits accurate control of dopant concentrations and of junction depth and position. Alternative fabrication processes permit implantation of the body and clamp regions before gate bus formation or through the gate bus after gate bus formation.

Claims

1. A semiconductor device comprising:

a substrate of a first conductivity type;

a gate structure in a plurality of trenches in the substrate, wherein in each of the trenches, the gate structure comprises a conductive gate surrounded by an insulating material that has a first thickness at a sidewall of the trench and a second thickness at a bottom of the trench, the second thickness being greater than the first thickness;

a first region of a second conductivity type adjacent to at least one of the trenches, the first region extending to a first depth in the substrate and including a channel region adjacent to the trenches;

a second region of the second conductivity type, wherein the second region is in electrical contact with the first region, and the second region extends to a second depth that is deeper than the first depth and shallower than the trenches; and

a third region of the first conductivity type atop the first region, wherein a voltage on the conductive gate controls a current flow from the third region through the first region to an underlying portion of the substrate, wherein

the substrate comprises a layer in which the trenches reside, the layer having a graded dopant profile such that a concentration of dopants of the first conductivity increases with depth in the layer.

2. The semiconductor device of claim 1, wherein the substrate comprises a series of implantations having varying depths and dopant concentrations such that the concentrations of the dopants of the first conductivity increase with depth in the substrate.

3. A semiconductor device comprising:

a substrate of a first conductivity type;

a gate structure in a plurality of trenches in the substrate, wherein in each of the trenches, the gate structure comprises a conductive gate surrounded by an insulating material that has a first thickness at a sidewall of the trench and a second thickness at a bottom of the trench, the second thickness being greater than the first thickness;

a first region of a second conductivity type adjacent to at least one of the trenches, the first region extending to a first depth in the substrate and including a channel region adjacent to the trenches;

a second region of the second conductivity type, wherein the second region comprises a series of implantations at varying depths, is in electrical contact with the first region, and extends to a second depth that is deeper than the first depth and shallower than the trenches; and

a third region of the first conductivity type atop the first region, wherein a voltage on the conductive gate controls a current flow from the third region through the first region to an underlying portion of the substrate.