Apparatus and methods for minimizing arcing in a plasma processing chamber

• US 7,086,347 B2
• Filed: 05/06/2002
• Issued: 08/08/2006
• Est. Priority Date: 05/06/2002
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Bailey, Andrew D. III, Howald, Arthur M., Kuthi, Andras, Berney, Butch
• Primary Examiner(s): Hassanzadeh, Parviz
• Assistant Examiner(s): CROWELL, ANNA M
• Application Number:
  US10/140,618
• Publication Number:
  US 20030205327A1
• Time in Patent Office: 1,555 Days
• Field of Search: 118/723.E, 118/723.R, 118/723.I, 156/345.45, 156/345.46, 156/345.44, 156/345.43, 156/345.47, 156/345.48, 156/345.49, 156/345.28, 315/111.21, 315/111.51
• US Class Current: 118/723.00R
• CPC Class Codes: H01J 37/32477 characterised by the means for protecting vessels or internal parts, e.g. coatings
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means

Abstract

A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.

Claims

1. A plasma processing chamber for processing a substrate to form electronic components thereon, comprising:

a plasma-facing component having a plasma-facing surface oriented toward a plasma in said plasma processing chamber during processing of said substrate, said plasma-facing component representing a cylindrical chamber wall and being electrically isolated from a ground terminal; and

a grounding arrangement coupled to said plasma-facing component, said grounding arrangement including a first resistance circuit and an RF filter arrangement;

disposed in a first current path between said plasma-facing component and said ground terminal, said grounding arrangement further including a plurality of RF filter arrangements disposed in a plurality of current paths between said plasma-facing component and said ground terminal, said plurality of RF filter arrangements being arranged so as to improve distribution of capacitive grounding of said plasma-facing component with respect to at least one surface of said plasma-facing component wherein a resistance value of said first resistance circuit is selected to substantially eliminate arcing between said plasma and said plasma-facing component during said processing of said substrate.

2. The plasma processing chamber of claim 1 where in said plasma-facing component is formed from a material that comprises substantially of boron carbide (B₄C).

3. The plasma processing chamber of claim 1 wherein said plasma-facing component is formed from a material that comprises substantially of silicon (Si).

4. The plasma processing chamber of claim 1 wherein said plasma-facing component is formed from a material that comprises substantially of graphite (C).

5. The plasma processing chamber of claim 1 wherein said plasma-facing component is formed from a material that comprises a metal.

6. The plasma processing chamber of claim 5 wherein said metal is aluminum.

7. The plasma processing chamber of claim 5 wherein said metal is steel.

8. The plasma processing chamber of claim 1 wherein said plasma-facing component is formed from a material that comprises substantially of silicon carbide (SiC).

9. The plasma processing chamber of claim 1 wherein said plasma-facing component is formed from a material that includes yittrium.

10. The plasma processing chamber of claim 1 wherein said plasma-facing component is formed from multiple layers of material.

11. The plasma processing chamber of claim 1 wherein said plasma-facing component is formed from a material that includes silicon carbide (SiC).

12. The plasma processing chamber of claim 11 wherein said plasma processing chamber is an inductively-coupled plasma processing chamber.

13. The plasma processing chamber of claim 1 wherein said processing said substrate includes etching said substrate using said plasma.

14. The plasma processing chamber of claim 1 wherein said grounding arrangement includes a plurality of resistance circuits having different resistance values and a switching arrangement, said switching arrangement being configured for selecting one of said plurality of resistance circuits for use as said first resistance circuit.

15. A plasma processing chamber for processing a substrate to form electronic components thereon, comprising:

a plasma-facing component having a plasma-facing surface oriented toward a plasma in said plasma processing chamber during processing of said substrate, said plasma-facing component represents a gas injector nozzle; and

a grounding arrangement coupled to said plasma-facing component, said grounding arrangement including a first resistance circuit disposed in a first current path between said plasma-facing component and said ground terminal, said grounding arrangement further including a first RF filter arrangement disposed in parallel to the first resistance circuit, in a first RF current path between said plasma-facing component and said ground terminal, said first RF filter arrangement being arranged so as to improve distribution of capacitive grounding of said plasma-facing component with respect to at least one surface of said plasma-facing component wherein a resistance value of said first resistance circuit is selected to substantially eliminate arcing between said plasma and said plasma-facing component during said processing of said substrate.

16. The plasma processing chamber of claim 15 wherein said plasma-facing component is said focus ring.

17. The plasma processing chamber of claim 15 wherein said plasma-facing component is said hot edge ring.

18. The plasma processing chamber of claim 15 wherein said plasma-facing component is formed from a material that comprises substantially of silicon carbide (SiC).

19. The plasma processing chamber of claim 15 wherein said plasma-facing component is formed from a material that includes silicon carbide (SiC).

20. The plasma processing chamber of claim 15 wherein said plasma processing chamber is an inductively-coupled plasma processing chamber.

21. The plasma processing chamber of claim 15 wherein said processing said substrate includes etching said substrate using said plasma.

22. The plasma processing chamber of claim 15 wherein said grounding arrangement includes a plurality of resistance circuits having different resistance values and a switching arrangement, said switching arrangement being configured for selecting one of said plurality of resistance circuits for use as said first resistance circuit.

23. The plasma processing chamber of claim 15 wherein said grounding arrangement includes a second RF filter arrangement disposed in a second RF current path between said plasma-facing component and said ground terminal, said second RF filter arrangement being arranged so as to improve said distribution of capacitive grounding of said plasma-facing component with respect to said at least one surface of said plasma-facing component.

24. The plasma processing chamber of claim 15 where in said plasma-facing component is formed from a material that comprises substantially of boron carbide (B₄C).

25. The plasma processing chamber of claim 15 wherein said plasma-facing component is formed from a material that comprises substantially of silicon (Si).

26. The plasma processing chamber of claim 15 wherein said plasma-facing component is formed from a material that comprises substantially of graphite (C).

27. The plasma processing chamber of claim 15 wherein said plasma-facing component is formed from a material that comprises a metal.

28. The plasma processing chamber of claim 27 wherein said metal is aluminum.

29. The plasma processing chamber of claim 27 wherein said metal is steel.

30. The plasma processing chamber of claim 15 wherein said plasma-facing component is formed from a material that includes yittrium.

31. The plasma processing chamber of claim 15 wherein said plasma-facing component is formed from multiple layers of material.