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Method of manufacturing a semiconductor device by irradiating with a laser beam

  • US 7,087,504 B2
  • Filed: 04/29/2002
  • Issued: 08/08/2006
  • Est. Priority Date: 05/18/2001
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a semiconductor device, said method comprising the steps of:

  • forming an amorphous semiconductor film over a substrate;

    introducing a metallic element into the amorphous semiconductor film;

    forming a first crystalline semiconductor film by heating the amorphous semiconductor film;

    removing an oxide film formed on a surface of the first crystalline semiconductor film;

    forming a clean oxide film on the first crystalline semiconductor film by spraying ozone water;

    forming a second crystalline semiconductor film by irradiating the first crystalline semiconductor film with a laser beam in an inert gas atmosphere.

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