Semiconductor light-emitting device and semiconductor light-emitting device

• US 7,087,932 B2
• Filed: 07/18/2001
• Issued: 08/08/2006
• Est. Priority Date: 07/18/2000
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Doi, Masato, Oohata, Toyoharu, Okuyama, Hiroyuki, Biwa, Goshi
• Primary Examiner(s): Flynn, Nathan J.
• Assistant Examiner(s): QUINTO, KEVIN V
• Application Number:
  US10/088,463
• Publication Number:
  US 20030107047A1
• Time in Patent Office: 1,847 Days
• Field of Search: 257/12, 257/13, 257/79, 257/86, 257/87, 257/88, 257/89, 257/90, 257/91, 257/92, 257/93, 257/94, 257/95, 257/96, 257/97, 257/98, 257/99, 257/100, 257/101, 257/102, 257/103, 257/627, 257/628
• US Class Current: 257/89
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02609 Crystal orientation
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction

Abstract

A semiconductor light-emitting element is provided which has a structure that does not complicate a fabrication process, can be formed in high precision and does not invite any degradation of crystallinity. A light-emitting element is formed, which includes a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type, a clad layer of a first conduction type, an active layer and a clad layer of a second conduction type, which are formed on the selective crystal growth layer wherein the active layer is formed so that the active layer extends in parallel to different crystal planes, the active layer is larger in size than a diffusion length of a constituent atom of a mixed crystal, or the active layer has a difference in at least one of a composition and a thickness thereof, thereby forming the active layer having a number of light-emitting wavelength regions whose emission wavelengths differ from one another. The element is so arranged that an electric current or currents are chargeable into the number of light-emitting wavelength regions. Because of the structure based on the selective growth, the band gap energy varies within the same active layer, thereby forming an element or device in high precision without complicating a fabrication process.

Claims

1. A semiconductor light-emitting element, comprising:

a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type;

a clad layer of a first conduction type formed on the selective crystal growth layer;

an active layer formed on the selective crystal growth layer; and

a clad layer of a second conduction type formed on the selective crystal growth layer;

wherein at least part of the active layer extends in parallel to different crystal planes, and first and second light-emitting wavelength regions, whose respective light-emitting wavelengths are different from each other, are formed in the active layer and are arranged such that an electric current is chargeable into both the first and the second light-emitting wavelength regions.

2. A semiconductor light-emitting element as claimed in claim 1, wherein the different crystal planes include at least two crystal planes selected from a (0001) plane, a (1-100) plane, a (1-101) plane, a (11-20) plane, a (1-102) plane, a (1-123) plane and a (11-22) plane of the Wurtzite type and crystal planes equivalent thereto.

3. A semiconductor light-emitting element as claimed in claim 1, wherein the selective crystal growth layer includes a layer selectively grown from an opening of a mask layer formed on an underlying crystal layer.

4. A semiconductor light-emitting element as claimed in claim 1, wherein the selective crystal growth layer includes a layer selectively grown from a seed crystal portion formed on a substrate.

5. A semiconductor light-emitting element as claimed in claim 1, wherein the selective crystal growth layer includes a layer formed by processing a surface of an underlying crystal layer in the form of irregularities and selectively growing from the irregularities.

6. A semiconductor light-emitting element as claimed in claim 1, wherein the selective crystal growth layer is formed of a nitride semiconductor.

7. A semiconductor light-emitting element as claimed in claim 1, wherein the active layer includes a semiconductor crystal layer formed by one growth cycle.

8. A semiconductor light-emitting element as claimed in claim 1, further comprising electrodes for both the first and second light-emitting wavelength regions, each of the first and second light-emitting wavelength regions having at least one of the electrodes individually formed for the respective wavelength region, wherein independent signals are respectively supplied to the individually formed electrodes.

9. A semiconductor light-emitting element as claimed in claim 1, further comprising electrodes for both the first and second light-emitting wavelength regions, each of the first and second light-emitting wavelength regions having at least one of the electrodes individually formed for the respective wavelength region, wherein a signal permitting a same level of emission intensity is applied to the individually formed electrodes.

10. A semiconductor light-emitting element as claimed in claim 1, wherein the active layer further includes a third light-emitting wavelength region capable of emitting light with an emission wavelength which differs from the emission wavelengths of the first and the second light-emitting wavelength regions.

11. A semiconductor light-emitting element, comprising:

a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type;

a clad layer of a first conduction type formed on the selective crystal growth layer;

an active layer formed on the selective crystal growth layer; and

a clad layer of a second conduction type formed on the selective crystal growth layer;

wherein the active layer is formed of at least a ternary mixed crystal material such that a diffusion length of an atom constituting part of the mixed crystal material is shorter than an extending length of the active layer, so that first and second light-emitting wavelength regions, whose respective light-emitting wavelengths are different from each other, are formed in the active layer and are arranged such that an electric current is chargeable into both the first and the second light-emitting wavelength regions.

12. A semiconductor light-emitting element as claimed in claim 11, wherein the compound semiconductor of the Wurtzite type is formed of a nitride semiconductor, the active layer is formed of an InGaN layer, and the atom includes In.

13. A semiconductor light-emitting element, comprising:

a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type;

a clad layer of a first conduction type formed on the selective crystal growth layer;

an active layer formed on the selective crystal growth layer; and

a clad layer of a second conduction type formed on the selective crystal growth layer;

wherein first and second light-emitting wavelength regions, which have respectively different light-emitting wavelengths due to a difference in at least one of a respective composition and a thickness thereof, are formed in the active layer and are arranged such that an electric current is chargeable into both the first and the second light-emitting wavelength regions.

14. A semiconductor light-emitting element as claimed in claim 13, wherein the selective crystal growth layer includes a layer which is selectively grown from an opening of a mask layer formed on an underlying crystal layer.

15. A semiconductor light-emitting element as claimed in claim 13, wherein the selective crystal growth layer includes a layer selectively grown from a seed crystal portion formed on a substrate.

16. A semiconductor light-emitting element as claimed in claim 13, wherein the selective crystal growth layer includes a layer formed by processing a surface of an underlying crystal layer in the form of irregularities and selectively growing from the irregularities.

17. A semiconductor light-emitting element as claimed in claim 13, wherein the first and the second light-emitting wavelength regions are formed at a side portion of the active layer which is a contact line between adjacent planes of the selective crystal growth layer and at a plane portion of the selective crystal growth layer.

18. A semiconductor light-emitting element as claimed in claim 13, wherein the selective crystal growth layer has an S plane whose orientation differs from an orientation of a principal plane of a substrate.

19. A semiconductor light-emitting element as claimed in claim 13, wherein the active layer is formed of at least a ternary mixed crystal material, with a mixed crystal ratio differing between the first and the second light-emitting wavelength regions.

20. A semiconductor light-emitting element as claimed in claim 19, wherein the active layer is formed of an InGaN layer, and a mixed crystal ratio in the InGaN layer differs between the first and the second light-emitting wavelength regions.

21. A semiconductor light-emitting element as claimed in claim 13, wherein the selective crystal growth layer is formed of a nitride semiconductor.

22. A semiconductor light-emitting element as claimed in claim 13, wherein the active layer is formed of a semiconductor crystal layer formed by one cycle of growth.

23. A semiconductor light-emitting element as claimed in claim 13, further comprising at least two electrodes of the first conduction type.

24. A semiconductor light-emitting element as claimed in claim 13, further comprising electrodes for both the first and the second light-emitting wavelength regions, each of the first and the second light-emitting wavelength regions having at least one of the electrodes individually formed for the respective wavelength region, wherein a same signal is supplied to the individually formed electrodes.

25. A semiconductor light-emitting element as claimed in claim 13, wherein the active layer further includes a third light-emitting wavelength region capable of emitting light with an emission wavelength which differs from the emission wavelengths of the first and the second light-emitting wavelength regions.

26. A semiconductor light-emitting element as claimed in claim 13, wherein the first and the second light-emitting wavelength regions, as well as a third light-emitting wavelength region, are provided such that light emission is possible at least simultaneously at two different wavelengths.

27. A semiconductor light-emitting device, comprising:

a substrate;

a plurality of selective crystal growth layers formed by selectively growing a compound semiconductor of a Wurtzite type on the substrate;

a clad layer of a first conduction type formed on each of the plurality of selective crystal growth layers;

an active layer formed on each of the plurality of selective crystal growth layers; and

a clad layer of a second conduction type formed on each of the plurality of selective crystal growth layers;

wherein at least two light emission groups, each consisting of the plurality of selective crystal growth layers that are at least similar to each other with respect to a shape element thereof, are formed on the substrate and have respective light-emitting wavelengths different from each other due to a difference in their respective shape element.

28. A semiconductor light-emitting device as claimed in claim 27, wherein the selective crystal growth layers are selectively grown via openings of a mask layer formed on an underlying crystal layer, and the shape elements respectively include a shape, a size and an array density of the openings.

29. A semiconductor light-emitting device as claimed in claim 27, wherein the selective crystal growth layers are selectively grown from a seed crystal portion formed on the substrate, and the shape element respectively include a shape, a size and an array density of the seed crystal portion.

30. A semiconductor light-emitting device as claimed in claim 27, wherein independent signals are respectively supplied to the plurality of light emission groups.

31. A semiconductor light-emitting device as claimed in claim 27, wherein a same signal is supplied to the plurality of light emission groups.

32. An image display device including, as a pixel, a semiconductor light-emitting element, the element comprising:

a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type;

a clad layer of a first conduction type formed on the selective crystal growth layer;

an active layer formed on the selective crystal growth layer; and

a clad layer of a second conduction type formed on the selective crystal growth layer;

wherein at least part of the active layer extends in parallel to different crystal planes, and first and second light-emitting wavelength regions, whose respective light-emitting wavelengths are different from each other, are formed in the active layer and are arranged such that an electric current is chargeable into both the first and the second light-emitting wavelength regions.

33. An illumination device including a plurality of semiconductor light-emitting elements in array, each element comprising:

a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type;

a clad layer of a first conduction type formed on the selective crystal growth layer;

an active layer formed on the selective crystal growth layer; and

a clad layer of a second conduction type formed on the selective crystal growth layer;

wherein at least part of the active layer extends in parallel to different crystal planes, and first and second light-emitting wavelength regions, whose respective light-emitting wavelengths are different from each other, are formed in the active layer and are arranged such that an electric current is chargeable into both the first and the second light-emitting wavelength regions.

34. An image display device including, as a pixel, a semiconductor light-emitting element, the element comprising:

a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type;

a clad layer of a first conduction type formed on the selective crystal growth layer;

an active layer formed on the selective crystal growth layer; and

a clad layer of a second conduction type formed on the selective crystal growth layer;

wherein the active layer is formed of at least a ternary mixed crystal material such that a diffusion length of an atom constituting part of the mixed crystal material is shorter than an extending length of the active layer, so that first and second light-emitting wavelength regions, whose respective light-emitting wavelengths are different from each other, are formed in the active layer and are arranged such that an electric current is chargeable into both the first and the second light-emitting wavelength regions.

35. An illumination device including a plurality of semiconductor light-emitting elements in array, each element comprising:

a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type;

a clad layer of a first conduction type formed on the selective crystal growth layer;

an active layer formed on the selective crystal growth layer; and

a clad layer of a second conduction type formed on the selective crystal growth layer;

wherein the active layer is formed of at least a ternary mixed crystal material such that a diffusion length of an atom constituting part of the mixed crystal material is shorter than an extending length of the active layer, so that first and second light-emitting wavelength regions, whose respective light-emitting wavelengths are different from each other, are formed in the active layer and are arranged such that an electric current is chargeable into both the first and the second light-emitting wavelength regions.

36. An image display device including, as a pixel, a semiconductor light-emitting element, the element comprising:

a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type;

a clad layer of a first conduction type formed on the selective crystal growth layer;

an active layer formed on the selective crystal growth layer; and

a clad layer of a second conduction type formed on the selective crystal growth layer;

wherein first and second light-emitting wavelength regions, which have respectively different light-emitting wavelengths due to a difference in at least one of a respective composition and a thickness thereof, are formed in the active layer and are arranged such that an electric current is chargeable into both the first and the second light-emitting wavelength regions.

37. An illumination device including a plurality of semiconductor light-emitting elements in array, each element comprising:

a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type;

a clad layer of a first conduction type formed on the selective crystal growth layer;

an active layer formed on the selective crystal growth layer; and

a clad layer of a second conduction type formed on the selective crystal growth layer;

wherein first and second light-emitting wavelength regions, which have respectively different light-emitting wavelengths due to a difference in at least one of a respective composition and a thickness thereof, are formed in the active layer and are arranged such that an electric current is chargeable into both the first and the second light-emitting wavelength regions.

38. An image display device including, as a pixel, a semiconductor light-emitting device, the light emitting device comprising:

a substrate;

a plurality of selective crystal growth layers formed by selectively growing a compound semiconductor of a Wurtzite type on the substrate;

a clad layer of a first conduction type formed on each of the plurality of selective crystal growth layers;

an active layer formed on each of the plurality of selective crystal growth layers; and

a clad layer of a second conduction type formed on each of the plurality of selective crystal growth layers;

wherein at least two light emission groups, each consisting of the plurality of selective crystal growth layers that are at least similar to each other with respect to a shape element thereof, are formed on the substrate and have respective light-emitting wavelengths different from each other due to a difference in their respective shape element.

39. An illumination device including a plurality of semiconductor light-emitting devices in array, each light-emitting device comprising:

a substrate;

a plurality of selective crystal growth layers formed by selectively growing a compound semiconductor of a Wurtzite type on the substrate;

a clad layer of a first conduction type formed on each of the plurality of selective crystal growth layers;

an active layer formed on each of the plurality of selective crystal growth layers; and

a clad layer of a second conduction type formed on each of the plurality of selective crystal growth layers;

wherein at least two light emission groups, each consisting of the plurality of selective crystal growth layers that are at least similar to each other with respect to a shape element thereof, are formed on the substrate and have respective light-emitting wavelengths different from each other due to a difference in their respective shape element.