Optical device, surface emitting type device and method for manufacturing the same

• US 7,087,935 B2
• Filed: 03/05/2004
• Issued: 08/08/2006
• Est. Priority Date: 09/22/2000
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Ishikawa, Masayuki, Nunoue, Shin-Ya
• Primary Examiner(s): Flynn, Nathan J.
• Assistant Examiner(s): MANDALA, VICTOR A
• Application Number:
  US10/792,838
• Publication Number:
  US 20040169188A1
• Time in Patent Office: 886 Days
• Field of Search: None
• US Class Current: 257/98
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 6/4214 the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device G02B6/4246 takes precedence
• CPC Class Codes: H01L 33/105 with a resonant cavity structure
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/465 with a resonant cavity structure
• CPC Class Codes: H01S 2304/04 MOCVD or MOVPE
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/1835 Non-circular mesa
• CPC Class Codes: H01S 5/18361 Structure of the reflectors, e.g. hybrid mirrors
• CPC Class Codes: H01S 5/18363 comprising air layers
• CPC Class Codes: H01S 5/209 special etch stop layers
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

The present invention provides an optical device and a surface emitting type device which have high efficiency and a stable operation and are manufactured at high manufacturing yield. The optical device and the surface emitting type device are characterized in that they have a distributed Bragg reflector (DBR) including a plurality of semiconductor layers made of a nitride semiconductor with substantially same gaps therbetween. Further, the optical device and the surface emitting type device are characterized in that they have a distributed Bragg reflector (DBR) in which a plurality of semiconductor layers made of nitride semiconductor and a plurality of organic layers made of organic material are alternately laminated.

Claims

1. An optical device comprising a reflector for reflecting light, said reflector including laminated layers in which a plurality of semiconductor layers, each of which has substantially the same thickness and is made of a first nitride semiconductor containing aluminum, and a plurality of organic layers, each of which has substantially the same thickness and is made of an organic material, are alternately laminated.

2. An optical device according to claim 1, wherein said reflector is a reflector for reflecting light having a wavelength of λ

, and wherein each of said semiconductor layers has a refractive index of n₃ and a film thickness of λ

/4n₃, and wherein each of said organic layers has a refractive index of n₄ and a film thickness of λ

/4n₄.

3. An optical device according to claim 1, wherein the organic material contains a transparent organic polymeric material which is one selected from the group consisting of poly-methyl methacrylate, polycarbonate, poly-diethylene glycol bisallyl carbonate, polystyrene, hard poly-vinyl chloride, styrene-methyl methacrylate copolymer, acrylonitrile-styrene copolymer, poly-cyclohexyl methacrylate, and poly-4-methyl-pentene-1.

4. An optical device according to claim 1, wherein said organic material contains an organic material having an electric conduction which is one selected from the group consisting of a π

electron conjugated polymer, a linear full π

conjugated polymer, and a non-conjugated polymer.

5. An optical device according to claim 1, wherein said organic material contains an organic material showing photochromism which is one selected from the group consisting of spirobenzopyran, fulgide, diarylethenes, and cyclophene.

6. An optical device according to claim 1, wherein said optical device is a surface emitting type device and wherein said reflector is disposed so that it reflects light from an active layer of said surface emitting type device.

7. An optical device according to claim 6, wherein said active layer is made of a second nitride semiconductor.

8. An optical device according to claim 1, wherein said optical device is a surface emitting type device in which a first reflecting portion for reflecting light from an active layer of said surface emitting type device and a second reflecting portion for reflecting light from said active layer are disposed so that they sandwich said active layer, and wherein at least one of said first reflecting portion and said second reflecting portion comprises said reflector.

9. An optical device according to claim 8, wherein said active layer is made of a third nitride semiconductor.