Method and apparatus for tuning a bragg grating in a semiconductor substrate

• US 7,088,877 B2
• Filed: 06/13/2001
• Issued: 08/08/2006
• Est. Priority Date: 06/13/2001
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Liu, Ansheng, Paniccia, Mario J., Nicolaescu, Remus
• Primary Examiner(s): Dunn, Drew A.
• Assistant Examiner(s): Pritchett, Joshua L.
• Application Number:
  US09/881,218
• Publication Number:
  US 20020197011A1
• Time in Patent Office: 1,882 Days
• Field of Search: 385/2, 385/8, 385/10, 385/37, 385/129, 385/130, 385/132
• US Class Current: 385/10
• CPC Class Codes: G02B 2006/12097 Ridge, rib or the like
• CPC Class Codes: G02B 2006/12135 Temperature control
• CPC Class Codes: G02B 6/124 Geodesic lenses or integrated gratings
• CPC Class Codes: G02F 1/0147 based on thermo-optic effects G02F1/132 takes precedence
• CPC Class Codes: G02F 1/025 in an optical waveguide structure G02F1/017, G02F1/2257 take precedence
• CPC Class Codes: G02F 2201/307 Reflective grating, i.e. Bragg grating

Abstract

A tunable Bragg grating method and apparatus. In one aspect of the present invention, a method according to an embodiment of the present invention includes directing an optical beam into a first end of an optical path having the first end and a second end disposed in a semiconductor substrate, reflecting a first portion of the optical beam having a first center wavelength back out from the first end of the optical path and tuning the optical path to reflect a second portion of the optical beam having a second center wavelength back out from the first end of the optical path. In one embodiment, the Bragg grating is tuned with a heater used to adjust a temperature of the semiconductor substrate. In another embodiment, charge in charge modulated regions along the optical path is modulated to tune the Bragg grating.

Claims

1. A method, comprising:

directing an optical beam into a first end of an optical path having the first end and a second end disposed in a semiconductor substrate;

reflecting a first portion of the optical beam having a first center wavelength back out from the first end of the optical path with first and second pluralities of silicon and polysilicon interfaces, respectively, disposed in the semiconductor substrate along the optical path between the first end and the second end, the first and second pluralities of silicon and polysilicon interfaces oriented substantially perpendicular to the semiconductor substrate; and

tuning the optical path to reflect a second portion of the optical beam having a second center wavelength back out from the first end of the optical path.

2. The method of claim 1 further comprising confining the optical beam to remain within the optical path between the first and second ends with an optical waveguide disposed in the semiconductor substrate between the first and second ends.

3. The method of claim 2 wherein confining the optical beam to remain within the optical waveguide comprises forming the optical waveguide with dielectric layers of a silicon-on-insulator wafer.

4. The method of claim 1 wherein tuning the optical path comprises adjusting a temperature of the first and second pluralities of silicon and polysilicon interfaces with a heater disposed proximate to the optical path through the semiconductor substrate.

5. The method of claim 1 wherein the first and second pluralities of silicon and polysilicon interfaces in the semiconductor substrate along the optical path form a Bragg grating.

6. A method, comprising:

directing an optical beam into a first end of an optical path having the first end and a second end disposed in a semiconductor substrate;

reflecting a first portion of the optical beam having a first center wavelength back out from the first end of the optical path by perturbing an effective index of refraction a plurality of times along the optical path with a plurality of insulated conductor structures protruding into the optical path; and

tuning the optical path to reflect a second portion of the optical beam having a second center wavelength back out from the first end of the optical path.

7. The method of claim 6 wherein perturbing the effective index of refraction the plurality of times along the optical path comprises applying a voltage to the plurality of insulated conductor structures to perturb a concentration of free charge carriers a plurality of times along the optical path.

8. The method of claim 6 wherein tuning the optical path comprises modulating charge in the optical path by modulating a voltage applied to the insulated conductor structures.

9. The method of claim 8 wherein confining the optical beam with the optical waveguide comprises forming the optical waveguide with dielectric layers of a silicon-on-insulator wafer.

10. The method of claim 6, further comprising confining the optical beam to remain within the optical path between the first and second ends with an optical waveguide disposed in the semiconductor substrate between the first and second ends.

11. The method of claim 6 wherein perturbing an effective index of refraction a plurality of times along the optical path with a plurality of insulated conductor structures protruding into the optical path forms a Bragg grating.

12. A method, comprising:

directing an optical beam into a first end of an optical path having the first end and a second end disposed in a semiconductor substrate;

reflecting a first portion of the optical beam having a first center wavelength back out from the first end of the optical path with at least three silicon and polysilicon interfaces disposed in the semiconductor substrate along the optical path between the first end and the second end, the at least three silicon and polysilicon interfaces forming a Bragg grating; and

tuning the at least three silicon and polysilicon interfaces to reflect a second portion of the optical beam having a second center wavelength back out from the first end of the optical path.

13. The method of claim 12 wherein the at least three silicon and polysilicon interfaces are oriented substantially perpendicular to the semiconductor substrate.

14. The method of claim 13 wherein tuning the at least three silicon and polysilicon interfaces comprises adjusting a temperature of the at least three silicon and polysilicon interfaces with a heater disposed proximate to the optical path through the semiconductor substrate.