Flame retardant epoxy resin composition, semiconductor encapsulating material using same, and resin encapsulated semiconductor device

• US 7,090,895 B2
• Filed: 07/24/2003
• Issued: 08/15/2006
• Est. Priority Date: 08/09/2002
• Status: Active Grant

• Current Assignee: Shin-Etsu Chemical Company Limited
• Original Assignee: Shin-Etsu Chemical Company Limited
• Inventors: Inoue, Yoshifumi
• Primary Examiner(s): ROBERTSON, JEFFREY B
• Application Number:
  US10/625,512
• Publication Number:
  US 20040152804A1
• Time in Patent Office: 1,118 Days
• Field of Search: 523/400, 523/461, 525/396, 525/523
• US Class Current: 427/386
• CPC Class Codes: C08J 2363/00 Characterised by the use of epoxy resins; Derivatives of epoxy resins
• CPC Class Codes: C08J 9/06 by a chemical blowing agent

Abstract

An epoxy resin composition is provided, which includes (A) an epoxy resin with at least 2 epoxy groups within each molecule, (B) a curing agent, and (C) a foaming agent. This composition displays excellent flame retardancy and reliability and is suitable for use as a semiconductor encapsulating material.

Claims

1. A process for producing a resin encapsulated semiconductor device comprising a semiconductor device and a cured product of a flame retardant epoxy resin composition, comprising the steps of:

molding on said semiconductor device a flame retardant epoxy resin composition comprising (A) a halogen-free epoxy resin with at least 2 epoxy groups within each molecule, (B) a curing agent having at least two phenolic hydroxyl groups within the curing molecule, and (C) a foaming agent which decomposes at a temperature of at least 180°

C.; and

curing the molded composition to form said cured product to encapsulate the semiconductor device within the cured product, wherein;

(i) the quantity of gas that is generated from said foaming agent (C) is at least 40 ml/g,

(ii) said curing agent (B) is present in a quantity which produces a ratio of the hydroxyl group equivalence of component (B) relative to the epoxy equivalence of the epoxy resin of component (A) which falls within the range of approximately 0.5 to 2.0,

(iii) said foaming agent (C) is present in a quantity ranging from 0.01 to 50% by weight based on the whole composition, and

the temperature for molding and curing the composition is lower than the decomposition temperature of said foaming agent (C).

2. The process according to claim 1, wherein the epoxy resin of the component (A) comprises a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a bisphenol S type epoxy resin, a phenol novolak type epoxy resin, a cresol novolak type epoxy resin, a naphthalene type epoxy resin, a biphenyl type epoxy resin, an N-glycidyl compound derived from an aromatic amine and a heterocyclic nitrogen base, or a combination of two or more thereof.

3. The composition according to claim 1, wherein the curing agent (B) comprises a phenol aralkyl resin having a structure represented by the formula:

4. The process according to claim 1, wherein said compound with at least two phenolic hydroxyl groups is a novolak type phenol resin, a resol type phenol resin, a polyoxystyrene, a phenol aralkyl resin, or a combination of two or more.

5. The process according to claim 1, wherein the foaming agent (C) decomposes at a temperature of at least 180°

C.

6. The process according to claim 1, wherein the foaming agent (C) decomposes at a temperature of at least 200°

C.

7. The process according to claim 6, wherein the foaming agent (C) decomposes at a temperature of at least 250°

C.

8. The process according to claim 6, wherein said temperature for molding and curing the composition is lower than 180°

C.

9. The process according to claim 1, wherein a quantity of gas that is generated from said foaming agent (C) is at least 80 ml/g.

10. The process according to claim 9, wherein a quantity of gas that is generated from said foaming agent (C) is at least 150 ml/g.

11. The process according to claim 1, wherein said foaming agent (C) comprises azodicarbonamide, azobistetrazole diaminoguanidine, azobistetrazole guanidine, 5-phenyltetrazole, bistetrazole guanidine, bistetrazole piperazine, bistetrazole diammonium, N,N′

-dinitrosopentamethylene tetramine, hydrazodicarbonamide, or a combination of two or more thereof.

12. The process according to claim 1, further comprising (D) a filler.

13. The process according to claim 12, wherein said filler (D) comprises a silica powder, alumina, talc, calcium carbonate, clay, mica or a combination of two or more;

the particle size of said filler (D) is no more than 20 μ

m; and

said filler (D) is present in a quantity from 70 to 95% by weight based on the whole composition.

14. The process according to claim 13, wherein said silica powder is fused silica.

15. A resin encapsulated semiconductor device produced by the process according to claim 1 encapsulating said semiconductor device.

16. A process for producing a resin encapsulated semiconductor device comprising a semiconductor device and a cured product of a semiconductor encapsulating material, comprising the steps of:

molding on said semiconductor device a semiconductor encapsulating material comprising a composition comprising (A) a halogen-free epoxy resin with at least 2 epoxy groups within each molecule, (B) a curing agent having at least two phenolic hydroxyl groups within the curing molecule, and (C) a foaming agent which decomposes at a temperature of at least 180°

C.; and

curing the molded composition to form said cured product to encapsulate the semiconductor device within the cured product, wherein;

(i) the quantity of gas that is generated from said foaming agent (C) is at least 40 ml/g,

(ii) said curing agent (B) is present in a quantity which produces a ratio of the hydroxyl group equivalence of component (B) relative to the epoxy equivalence of the epoxy resin of component (A) which falls within the range of approximately 0.5 to 2.0,

(iii) said foaming agent (C) is present in a quantity ranging from 0.01 to 50% by weight based on the whole composition, and

the temperature for molding and curing the composition is lower than the decomposition temperature of said foaming agent (C).